Micron Technology Inc.
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MT28F128J3RP-12 ET TR
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MT28F128J3RP-12 ET TR

Product Overview

Category

MT28F128J3RP-12 ET TR belongs to the category of Flash Memory.

Use

This product is primarily used for data storage in electronic devices such as smartphones, tablets, digital cameras, and other portable devices.

Characteristics

  • High storage capacity: The MT28F128J3RP-12 ET TR offers a storage capacity of 128GB, allowing users to store a large amount of data.
  • Fast data transfer rate: With a high-speed interface, this flash memory enables quick data transfer between the device and the memory.
  • Reliable performance: The product is designed to provide reliable and consistent performance, ensuring data integrity and security.
  • Compact package: The MT28F128J3RP-12 ET TR comes in a compact package, making it suitable for integration into small-sized electronic devices.
  • Low power consumption: This flash memory consumes minimal power, contributing to longer battery life in portable devices.

Packaging/Quantity

The MT28F128J3RP-12 ET TR is typically packaged in a small form factor, such as a surface-mount package (SMP). It is available in various quantities, ranging from individual units to bulk packaging for larger-scale production.

Specifications

  • Model: MT28F128J3RP-12 ET TR
  • Storage Capacity: 128GB
  • Interface: NAND Flash
  • Operating Voltage: 3.3V
  • Data Transfer Rate: Up to 100MB/s (read), up to 50MB/s (write)
  • Operating Temperature Range: -40°C to 85°C
  • Package Type: Surface-Mount Package (SMP)

Detailed Pin Configuration

The MT28F128J3RP-12 ET TR has a specific pin configuration that allows for proper connection and communication with the device it is integrated into. The detailed pin configuration is as follows:

  1. VCC: Power supply voltage
  2. GND: Ground connection
  3. CE: Chip enable
  4. WE: Write enable
  5. RE: Read enable
  6. A0-A18: Address lines
  7. DQ0-DQ15: Data input/output lines
  8. RY/BY: Ready/Busy status
  9. WP: Write protect
  10. CLE: Command latch enable
  11. ALE: Address latch enable

Functional Features

  • High-speed data transfer: The MT28F128J3RP-12 ET TR offers fast read and write speeds, allowing for efficient data access and storage.
  • Error correction: This flash memory incorporates error correction techniques to ensure data integrity and minimize the risk of data loss or corruption.
  • Wear leveling: The product employs wear leveling algorithms to distribute data evenly across memory cells, extending the lifespan of the flash memory.
  • Block management: The flash memory utilizes block management techniques to optimize performance and enhance reliability.

Advantages and Disadvantages

Advantages

  • Large storage capacity
  • Fast data transfer rate
  • Compact package size
  • Low power consumption
  • Reliable performance

Disadvantages

  • Relatively higher cost compared to lower-capacity flash memory options
  • Limited endurance due to the finite number of program/erase cycles

Working Principles

The MT28F128J3RP-12 ET TR operates based on NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge applied to it. When reading data, the charge level of each cell is measured to retrieve the stored information. During writing, the charge level is adjusted to store new data.

Detailed Application Field Plans

The MT28F128J3RP-12 ET TR is widely used in various electronic devices that require high-capacity data storage. Some of the common application fields include:

  1. Smartphones and tablets: The flash memory provides ample storage for apps, media files, and user data.
  2. Digital cameras: It allows for storing a large number of high-resolution photos and videos.
  3. Portable gaming consoles: The product enables game developers to create immersive gaming experiences with extensive data storage capabilities.
  4. Industrial automation systems: The flash memory is utilized for storing critical system data and firmware updates.
  5. Automotive electronics: It is used in infotainment systems, navigation units, and other automotive applications requiring reliable and high-capacity storage.

Detailed and Complete Alternative Models

  1. MT29F128G08CBACAWP
  2. S34ML01G200TFI000
  3. IS37SML01G1
  4. K9GBG08U0A
  5. H27UCG8T2BTR

These alternative models offer similar features and specifications to the MT28F128J3RP-12 ET TR

Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan MT28F128J3RP-12 ET TR dalam solusi teknis

Sure! Here are 10 common questions and answers related to the application of MT28F128J3RP-12 ET TR in technical solutions:

  1. Question: What is the capacity of the MT28F128J3RP-12 ET TR?
    Answer: The MT28F128J3RP-12 ET TR has a capacity of 128 megabits (16 megabytes).

  2. Question: What is the operating voltage range for this memory device?
    Answer: The operating voltage range for the MT28F128J3RP-12 ET TR is typically between 2.7V and 3.6V.

  3. Question: Can this memory be used in industrial applications?
    Answer: Yes, the MT28F128J3RP-12 ET TR is designed for industrial temperature ranges (-40°C to +85°C) and can be used in various industrial applications.

  4. Question: What is the access time of this memory device?
    Answer: The access time for the MT28F128J3RP-12 ET TR is 120 nanoseconds (ns).

  5. Question: Does this memory support random access or sequential access?
    Answer: The MT28F128J3RP-12 ET TR supports random access, allowing data to be read from or written to any location within the memory.

  6. Question: Is this memory compatible with standard microcontrollers?
    Answer: Yes, the MT28F128J3RP-12 ET TR is compatible with standard microcontrollers that support the required interface (e.g., parallel or serial).

  7. Question: Can this memory be used as a boot device?
    Answer: Yes, the MT28F128J3RP-12 ET TR can be used as a boot device in systems where firmware or software needs to be loaded during the boot process.

  8. Question: What is the endurance rating of this memory?
    Answer: The MT28F128J3RP-12 ET TR has an endurance rating of 100,000 program/erase cycles per block.

  9. Question: Does this memory support hardware or software data protection features?
    Answer: Yes, the MT28F128J3RP-12 ET TR supports both hardware and software data protection features to ensure data integrity and security.

  10. Question: Can this memory be used in automotive applications?
    Answer: Yes, the MT28F128J3RP-12 ET TR is designed to meet the stringent requirements of automotive applications and can be used in automotive systems.

Please note that these answers are based on general information about the MT28F128J3RP-12 ET TR and may vary depending on specific implementation details and requirements.