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M29W400FB5AN6E

M29W400FB5AN6E

Product Overview

Category

M29W400FB5AN6E belongs to the category of Flash Memory.

Use

It is commonly used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

  • Non-volatile memory: Retains data even when power is turned off.
  • High storage capacity: The M29W400FB5AN6E offers a storage capacity of 4 gigabits (512 megabytes).
  • Fast read and write speeds: Allows for quick access and transfer of data.
  • Reliable performance: Designed to withstand frequent read/write cycles without data corruption.
  • Low power consumption: Optimized for energy efficiency, making it suitable for battery-powered devices.

Package

The M29W400FB5AN6E is available in a compact surface-mount package, ensuring easy integration into circuit boards.

Essence

The essence of M29W400FB5AN6E lies in its ability to provide reliable and high-capacity storage for electronic devices, enabling efficient data management and retrieval.

Packaging/Quantity

This product is typically packaged in reels or trays, with each reel or tray containing a specific quantity of M29W400FB5AN6E flash memory chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

  • Memory Type: NOR Flash
  • Capacity: 4 gigabits (512 megabytes)
  • Interface: Parallel
  • Supply Voltage: 2.7V - 3.6V
  • Operating Temperature Range: -40°C to +85°C
  • Package Type: TSOP48

Detailed Pin Configuration

The M29W400FB5AN6E features a TSOP48 package with the following pin configuration:

  1. VCC
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. A8
  11. A9
  12. A10
  13. A11
  14. A12
  15. A13
  16. A14
  17. A15
  18. A16
  19. A17
  20. A18
  21. A19
  22. A20
  23. A21
  24. A22
  25. A23
  26. A24
  27. A25
  28. A26
  29. A27
  30. A28
  31. A29
  32. A30
  33. A31
  34. BYTE#
  35. WE#
  36. CE#
  37. OE#
  38. RY/BY#
  39. RESET#
  40. DQ0
  41. DQ1
  42. DQ2
  43. DQ3
  44. DQ4
  45. DQ5
  46. DQ6
  47. DQ7
  48. GND

Functional Features

  • Erase and Program Operations: The M29W400FB5AN6E supports sector erase and byte program operations, allowing for flexible data manipulation.
  • Block Locking: Certain sectors can be locked to prevent accidental erasure or modification of critical data.
  • Read Protection: Provides security by allowing the device to be protected against unauthorized access.
  • Software Reset: Allows for a software-initiated reset of the device.

Advantages and Disadvantages

Advantages

  • High storage capacity enables ample space for data storage needs.
  • Fast read and write speeds facilitate quick data access and transfer.
  • Reliable performance ensures data integrity even with frequent usage.
  • Low power consumption prolongs battery life in portable devices.

Disadvantages

  • Limited endurance: Flash memory has a finite number of erase/write cycles before it may become unreliable.
  • Relatively higher cost compared to other types of memory.

Working Principles

The M29W400FB5AN6E utilizes NOR flash memory technology. It stores data by trapping electrons in floating gate transistors, which can be electrically erased and reprogrammed. When reading data, the stored charge is detected, allowing retrieval of the stored information.

Detailed Application Field Plans

The M29W400FB5AN6E finds applications in various electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Portable media players - Automotive electronics - Industrial control systems - Medical devices

Detailed and Complete Alternative Models

  1. M29W400FT5AN6E
  2. M29W400FB5AN6F
  3. M29W400FT5AN6F
  4. M29W400FB5AN6G
  5. M29W400FT5AN6G

These alternative models offer similar specifications and functionality to the M29W400

Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan M29W400FB5AN6E dalam solusi teknis

Sure! Here are 10 common questions and answers related to the application of M29W400FB5AN6E in technical solutions:

  1. Q: What is the M29W400FB5AN6E? A: The M29W400FB5AN6E is a flash memory device commonly used in various technical solutions.

  2. Q: What is the storage capacity of the M29W400FB5AN6E? A: The M29W400FB5AN6E has a storage capacity of 4 megabits (512 kilobytes).

  3. Q: What is the operating voltage range for the M29W400FB5AN6E? A: The M29W400FB5AN6E operates within a voltage range of 2.7V to 3.6V.

  4. Q: What is the interface used to connect the M29W400FB5AN6E to a microcontroller or system? A: The M29W400FB5AN6E uses a standard parallel interface for communication.

  5. Q: Can the M29W400FB5AN6E be used for code storage in embedded systems? A: Yes, the M29W400FB5AN6E can be used for storing code in various embedded systems.

  6. Q: Is the M29W400FB5AN6E suitable for high-speed data transfer applications? A: No, the M29W400FB5AN6E is not designed for high-speed data transfer applications due to its limited bandwidth.

  7. Q: Does the M29W400FB5AN6E support hardware write protection? A: Yes, the M29W400FB5AN6E supports hardware write protection to prevent accidental modification of stored data.

  8. Q: Can the M29W400FB5AN6E be used in automotive applications? A: Yes, the M29W400FB5AN6E is suitable for use in automotive applications that require non-volatile storage.

  9. Q: What is the typical endurance of the M29W400FB5AN6E? A: The M29W400FB5AN6E has a typical endurance of 100,000 program/erase cycles.

  10. Q: Is the M29W400FB5AN6E RoHS compliant? A: Yes, the M29W400FB5AN6E is RoHS (Restriction of Hazardous Substances) compliant, ensuring it meets environmental standards.

Please note that these answers are general and may vary depending on specific datasheet or manufacturer specifications.