M29W128GL70N3E - English Editing Encyclopedia Entry

Product Overview

Category

M29W128GL70N3E belongs to the category of flash memory devices.

Use

This product is primarily used for data storage in various electronic devices, such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• High storage capacity: The M29W128GL70N3E offers a generous storage capacity of 128 gigabytes (GB).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick access to stored information.
• Reliable performance: This flash memory device ensures reliable and consistent performance over extended periods.
• Compact package: The M29W128GL70N3E comes in a small form factor, making it suitable for integration into compact electronic devices.
• Low power consumption: It consumes minimal power, contributing to energy efficiency in battery-powered devices.

Package and Quantity

The M29W128GL70N3E is packaged in a surface-mount technology (SMT) package. Each package contains one unit of the flash memory device.

Specifications

• Storage Capacity: 128 GB
• Interface: Serial Peripheral Interface (SPI)
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 100 megabytes per second (MB/s)
• Erase/Program Cycle Endurance: 100,000 cycles

Detailed Pin Configuration

The M29W128GL70N3E flash memory device features the following pin configuration:

1. VCC: Power supply voltage
2. GND: Ground reference
3. /CS: Chip select input
4. SCK: Serial clock input
5. SI: Serial data input
6. SO: Serial data output
7. WP#/ACC: Write protect input or accelerated programming input
8. HOLD#/RESET#: Hold input or reset input

Functional Features

• High-speed Read/Write Operations: The M29W128GL70N3E enables fast data read and write operations, facilitating efficient data access.
• Block Erase Capability: It supports block erase functionality, allowing for the simultaneous erasure of multiple memory blocks.
• Software Protection Mechanism: This flash memory device incorporates software protection features to prevent unauthorized access and ensure data security.
• Error Correction Code (ECC): ECC algorithms are implemented to detect and correct errors that may occur during data transmission or storage.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rate
• Compact size
• Low power consumption
• Reliable performance

Disadvantages

• Relatively high cost compared to lower-capacity flash memory devices
• Limited compatibility with certain older devices lacking SPI interface support

Working Principles

The M29W128GL70N3E flash memory device utilizes NAND flash technology. It stores data in a series of memory cells organized into blocks. When data is written, the memory cells are programmed by applying appropriate voltage levels. During read operations, the stored data is retrieved by sensing the electrical state of the memory cells.

Detailed Application Field Plans

The M29W128GL70N3E flash memory device finds applications in various electronic devices, including: 1. Smartphones and tablets 2. Digital cameras 3. Portable media players 4. Solid-state drives (SSDs) 5. Industrial control systems 6. Automotive electronics

Alternative Models

1. M29W128GH70N6E
2. M29W128GT70N6E
3. M29W128GB70N6E
4. M29W128GX70N6E

These alternative models offer similar specifications and functionality to the M29W128GL70N3E flash memory device.

In conclusion, the M29W128GL70N3E flash memory device is a high-capacity storage solution with fast data transfer rates, compact size, and reliable performance. It finds applications in various electronic devices, providing ample storage for data-intensive tasks.