M29W128GH70N6F TR

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: High capacity, non-volatile, fast read/write speeds
• Package: Surface Mount Technology (SMT)
• Essence: Non-volatile memory for storing digital data
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Capacity: 128 gigabits (16 gigabytes)
• Interface: Parallel NOR Flash
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Read Speed: Up to 70 nanoseconds
• Write Speed: Up to 70 nanoseconds
• Erase Time: Typically less than 2 seconds

Detailed Pin Configuration

The M29W128GH70N6F TR has a pin configuration as follows:

1. VCC: Power supply voltage
2. A0-A23: Address inputs
3. DQ0-DQ15: Data inputs/outputs
4. WE#: Write enable control
5. CE#: Chip enable control
6. OE#: Output enable control
7. RP#/BYTE#: Reset/byte control
8. RY/BY#: Ready/busy status output
9. WP#/ACC: Write protect input/acceleration mode control
10. VSS: Ground

Functional Features

• High-density storage: The M29W128GH70N6F TR offers a large capacity of 128 gigabits, allowing for ample data storage.
• Fast read/write speeds: With read and write speeds of up to 70 nanoseconds, the flash memory enables quick data access and transfer.
• Non-volatile memory: The data stored in the M29W128GH70N6F TR is retained even when power is removed, ensuring data integrity.
• Reliable operation: The flash memory is designed to withstand a wide range of operating temperatures and provides reliable performance.

Advantages and Disadvantages

Advantages: - High storage capacity - Fast read/write speeds - Non-volatile memory - Reliable operation in various environments

Disadvantages: - Limited endurance: Flash memory has a limited number of erase/write cycles before it may become unreliable. - Higher cost compared to other types of memory

Working Principles

The M29W128GH70N6F TR utilizes NOR flash memory technology. It stores digital data by trapping electrons in a floating gate, which can be electrically programmed or erased. When reading data, the memory cell's state is determined by measuring the voltage level on the bitline. The control signals (CE#, WE#, OE#) enable the desired operations such as reading, writing, or erasing.

Detailed Application Field Plans

The M29W128GH70N6F TR is widely used in various electronic devices that require non-volatile data storage, including:

1. Smartphones and tablets: Used for storing operating systems, applications, and user data.
2. Solid-state drives (SSDs): Provides high-capacity storage for computers and servers.
3. Automotive electronics: Used for firmware storage in infotainment systems, instrument clusters, and advanced driver-assistance systems (ADAS).
4. Industrial equipment: Enables data logging, firmware storage, and configuration settings in industrial automation systems.
5. Consumer electronics: Used in digital cameras, gaming consoles, and portable media players for data storage.

Detailed and Complete Alternative Models

1. M29W128GL70N6E TR: Similar to M29W128GH70N6F TR, but with different package options.
2. M29W128GH70N6E TR: Higher endurance version of M29W128GH70N6F TR.
3. M29W128GB70N6F TR: Lower capacity variant with 64 gigabits (8 gigabytes) of storage.

These alternative models offer similar functionality and can be considered based on specific requirements and availability.

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