BAS40WT-TP Diode: Product Overview and Specifications

Introduction

The BAS40WT-TP diode is a crucial component in electronic circuits, belonging to the category of small signal Schottky diodes. This diode is widely used in various applications due to its unique characteristics and reliable performance.

Basic Information Overview

• Category: Small Signal Schottky Diode
• Use: Rectification, clamping, and protection in electronic circuits
• Characteristics: Low forward voltage drop, fast switching speed, low leakage current
• Package: SOD-123 package
• Essence: High-speed switching and rectification
• Packaging/Quantity: Available in reels with a quantity of 3000 units per reel

Specifications

• Forward Voltage Drop: 0.32V at 1A
• Reverse Leakage Current: 2µA at 25V
• Maximum Continuous Forward Current: 200mA
• Maximum Reverse Voltage: 40V
• Operating Temperature Range: -65°C to +125°C

Detailed Pin Configuration

The BAS40WT-TP diode has a standard SOD-123 package with the following pin configuration: - Pin 1: Anode - Pin 2: Cathode

Functional Features

• Fast Switching Speed: Enables rapid response in electronic circuits.
• Low Forward Voltage Drop: Minimizes power loss and heat generation.
• Low Leakage Current: Ensures minimal power dissipation in reverse bias conditions.

Advantages and Disadvantages

Advantages

• Fast switching speed enhances circuit efficiency.
• Low forward voltage drop reduces power losses.
• Compact SOD-123 package allows for space-efficient designs.

Disadvantages

• Limited maximum continuous forward current compared to larger diode options.
• Higher cost compared to standard silicon diodes.

Working Principles

The BAS40WT-TP diode operates based on the Schottky barrier principle, where the metal-semiconductor junction provides fast switching and low forward voltage characteristics. When forward biased, it allows current flow with minimal voltage drop, making it suitable for high-frequency applications.

Detailed Application Field Plans

The BAS40WT-TP diode finds extensive use in the following applications: - RF and microwave circuits - Signal demodulation - Voltage clamping circuits - High-speed rectification

Detailed and Complete Alternative Models

• 1N5819: Similar Schottky diode with higher current handling capability
• BAT54S: Dual Schottky diode in a compact SOT-23 package
• BAV99: Dual diode array with similar characteristics

In conclusion, the BAS40WT-TP diode offers fast switching, low forward voltage, and low leakage current, making it an ideal choice for high-frequency and low-power applications.

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