MX29LV400CBXBI-55Q

Product Overview

Category: Integrated Circuit (IC)

Use: Memory device

Characteristics: - Non-volatile memory - Flash memory technology - High storage capacity - Low power consumption

Package: BGA (Ball Grid Array)

Essence: The MX29LV400CBXBI-55Q is a flash memory IC that provides non-volatile storage capabilities. It is commonly used in various electronic devices for data storage purposes.

Packaging/Quantity: The MX29LV400CBXBI-55Q is typically packaged in a BGA package, which consists of an array of solder balls on the bottom side of the IC. The quantity per package may vary depending on the manufacturer's specifications.

Specifications

• Memory Capacity: 4 Megabits (512 Kilobytes)
• Operating Voltage: 2.7V - 3.6V
• Access Time: 55 nanoseconds
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Pin Configuration

The MX29LV400CBXBI-55Q has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. WE#
43. CE#
44. OE#
45. BYTE#
46. VSS
47. NC
48. VCC

Functional Features

• Non-volatile Storage: The MX29LV400CBXBI-55Q retains data even when power is removed, making it suitable for applications requiring persistent storage.
• Flash Memory Technology: This IC utilizes flash memory technology, which allows for high-speed read and write operations.
• High Storage Capacity: With a capacity of 4 Megabits, the MX29LV400CBXBI-55Q can store a significant amount of data.
• Low Power Consumption: The IC is designed to consume minimal power during operation, making it energy-efficient.

Advantages and Disadvantages

Advantages: - Non-volatile storage capability - High storage capacity - Fast read and write operations - Low power consumption

Disadvantages: - Limited endurance (limited number of erase/write cycles) - Relatively higher cost compared to other memory technologies

Working Principles

The MX29LV400CBXBI-55Q operates based on the principles of flash memory technology. It uses floating-gate transistors to store and retrieve data. When data is written, electrons are trapped in the floating gate, altering the transistor's behavior. These trapped charges represent the stored information. During read operations, the state of the transistor is determined by measuring the current flow, allowing the retrieval of stored data.

Detailed Application Field Plans

The MX29LV400CBXBI-55Q is widely used in various electronic devices that require non-volatile storage capabilities. Some common application fields include: - Consumer electronics (e.g., digital cameras, MP3 players) - Communication devices (e.g., routers, modems) - Automotive electronics (e.g., infotainment systems, engine control units) - Industrial equipment (e.g., measurement devices, control systems)

Alternative Models

There are several alternative models available in the market that offer similar functionality to the MX29LV400CBXBI-55Q. Some notable alternatives include: - AT49BV/LV series by Adesto Technologies - S29GL series by Cypress Semiconductor - M29W series by STMicroelectronics

These alternative models may have different specifications and pin configurations but serve the same purpose of providing non-volatile memory storage.

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