MX29GL128FDT2I-11G

Product Overview

Category

MX29GL128FDT2I-11G belongs to the category of flash memory chips.

Use

This product is primarily used for data storage in electronic devices such as smartphones, tablets, digital cameras, and other portable devices.

Characteristics

• High storage capacity: MX29GL128FDT2I-11G offers a storage capacity of 128 gigabits (16 gigabytes).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick access to stored information.
• Reliable performance: This flash memory chip ensures reliable and stable performance, making it suitable for various applications.
• Low power consumption: MX29GL128FDT2I-11G is designed to consume minimal power, enhancing the battery life of devices it is used in.

Package

MX29GL128FDT2I-11G comes in a compact package that is compatible with standard surface mount technology (SMT) assembly processes.

Essence

The essence of MX29GL128FDT2I-11G lies in its ability to store large amounts of data reliably and efficiently, enabling seamless operation of electronic devices.

Packaging/Quantity

This flash memory chip is typically packaged in reels or trays, depending on the manufacturer's specifications. The quantity per package may vary, but it is commonly available in bulk quantities suitable for mass production.

Specifications

• Memory Type: Flash
• Capacity: 128 gigabits (16 gigabytes)
• Voltage Range: 2.7V - 3.6V
• Interface: Parallel
• Operating Temperature: -40°C to +85°C
• Package Type: TSOP48

Detailed Pin Configuration

The MX29GL128FDT2I-11G flash memory chip has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. WE#
43. CE#
44. RE#
45. WP#
46. RY/BY#
47. OE#
48. GND

Functional Features

• Erase and Program Operations: MX29GL128FDT2I-11G supports both sector erase and byte program operations, allowing for flexible data management.
• Block Locking: This flash memory chip provides the option to lock specific blocks of memory, preventing accidental modification or erasure.
• Read and Write Protection: MX29GL128FDT2I-11G offers read and write protection features to safeguard stored data from unauthorized access or modification.
• High-Speed Performance: With its fast data transfer rate, this flash memory chip ensures efficient operation and quick access to stored information.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption

Disadvantages

• Limited compatibility with certain devices due to the parallel interface
• Higher cost compared to lower-capacity flash memory chips

Working Principles

MX29GL128FDT2I-11G utilizes NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. The data is stored by trapping electric charges within these cells, which can be accessed and modified as needed.

Detailed Application Field Plans

MX29GL128FDT2I-11G is widely used in various electronic devices that require high-capacity data storage. Some of its application fields include:

1. Smartphones and tablets
2. Digital cameras
3. Portable media players
4. Automotive infotainment systems
5. Industrial control systems
6. Medical devices

Detailed and Complete Alternative Models

1. MX29GL064FDT2I-10G: 64 gigabit (8 gigabyte) flash memory chip with similar specifications.
2. MX29GL256FDT2