The MRF166C is a high-power NPN silicon bipolar transistor designed for use in industrial, scientific, and medical (ISM) applications. This versatile transistor offers high power gain, efficiency, and reliability, making it suitable for a wide range of RF power amplification needs.
The MRF166C transistor features the following specifications: - Frequency Range: 10 MHz to 500 MHz - Power Output: 150 Watts - Voltage: 12 Volts - Current: 15 Amps - Gain: 13 dB
The MRF166C transistor has a standard pin configuration as follows: 1. Base (B) 2. Emitter (E) 3. Collector (C)
The MRF166C operates based on the principles of NPN bipolar transistor amplification. When biased and driven with appropriate RF signals, it amplifies the input power to deliver high-power output signals within the specified frequency range.
The MRF166C finds application in various ISM fields, including: - Industrial Heating Systems - Medical Diathermy Equipment - Scientific Research Instruments
For users seeking alternative models, the following transistors can be considered: - MRF167 - MRF168 - MRF169
In conclusion, the MRF166C NPN silicon bipolar transistor offers high power gain, efficiency, and reliability, making it a valuable component for RF power amplification in ISM applications.
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What is MRF166C?
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