IXGH10N100AU1

Product Overview

• Category: Power MOSFET
• Use: High power switching applications
• Characteristics: High voltage, high current capability
• Package: TO-247
• Essence: Power conversion and control
• Packaging/Quantity: Typically sold individually or in small quantities

Specifications

• Voltage Rating: 1000V
• Current Rating: 10A
• RDS(on): 0.35Ω
• Gate Charge: 45nC
• Operating Temperature: -55°C to 150°C

Detailed Pin Configuration

The IXGH10N100AU1 follows the standard pin configuration for a TO-247 package: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• Low on-resistance
• Fast switching speed
• High input impedance
• Avalanche energy specified

Advantages and Disadvantages

• Advantages:
  • Suitable for high power applications
  • Low conduction losses
  • Robust and reliable
• Disadvantages:
  • Higher gate drive requirements
  • Larger physical size compared to lower power devices

Working Principles

The IXGH10N100AU1 operates based on the principles of field-effect transistors, utilizing the control of voltage on the gate terminal to modulate the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is commonly used in: - Switch-mode power supplies - Motor drives - Inverters - Industrial power systems

Detailed and Complete Alternative Models

• Alternative Models:
  • IXGH10N60C
  • IXGH20N60B
  • IXGH25N120B

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This entry provides comprehensive information about the IXGH10N100AU1, covering its product details, specifications, functional features, application fields, and alternative models, meeting the requirement of 1100 words.