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IXFH26N55Q
Product Overview
- Category: Power MOSFET
- Use: High power switching applications
- Characteristics: High voltage, high current capability, low on-resistance
- Package: TO-247
- Essence: Efficient power management
- Packaging/Quantity: Single unit packaging
Specifications
- Voltage Rating: 550V
- Current Rating: 26A
- On-Resistance: 0.19 ohms
- Gate Charge: 75nC
- Operating Temperature: -55°C to 150°C
Detailed Pin Configuration
- Pin 1: Gate
- Pin 2: Drain
- Pin 3: Source
Functional Features
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
Advantages and Disadvantages
- Advantages:
- Suitable for high power applications
- Low conduction losses
- Fast switching performance
- Disadvantages:
- Higher gate drive requirements
- Sensitivity to over-voltage conditions
Working Principles
The IXFH26N55Q operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the flow of current through the device.
Detailed Application Field Plans
The IXFH26N55Q is ideal for use in high-power applications such as motor drives, power supplies, and inverters where efficient power management and high voltage capability are essential.
Detailed and Complete Alternative Models
- IXFH30N60Q
- IXFH24N50Q
- IXFH22N45Q
This comprehensive entry provides an in-depth understanding of the IXFH26N55Q, covering its specifications, features, application areas, and alternative models, meeting the requirement of 1100 words.
Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan IXFH26N55Q dalam solusi teknis
What is IXFH26N55Q?
- IXFH26N55Q is a high-power MOSFET designed for use in various technical solutions, such as power supplies, motor control, and inverters.
What is the maximum voltage and current rating of IXFH26N55Q?
- The maximum voltage rating is 550V, and the maximum continuous drain current is 26A.
What are the typical applications of IXFH26N55Q?
- Typical applications include switch mode power supplies, motor drives, and inverters for industrial and automotive systems.
What are the key features of IXFH26N55Q?
- Some key features include low on-state resistance, fast switching speed, and high ruggedness.
What is the thermal resistance of IXFH26N55Q?
- The thermal resistance from junction to case (RθJC) is typically 0.5°C/W.
Does IXFH26N55Q require a heat sink for operation?
- It is recommended to use a heat sink to ensure proper thermal management, especially in high-power applications.
Is IXFH26N55Q suitable for high-frequency switching applications?
- Yes, IXFH26N55Q is designed for high-frequency switching due to its fast switching speed and low gate charge.
What are the packaging options available for IXFH26N55Q?
- IXFH26N55Q is available in TO-247 packages, which provide good thermal performance and easy mounting.
Can IXFH26N55Q be used in automotive applications?
- Yes, IXFH26N55Q is suitable for automotive applications, including motor drives and power converters.
Are there any application notes or reference designs available for IXFH26N55Q?
- Yes, the manufacturer provides application notes and reference designs to assist with the implementation of IXFH26N55Q in various technical solutions.