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IS66WVE1M16EBLL-70BLI
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IS66WVE1M16EBLL-70BLI

Product Overview

Category

IS66WVE1M16EBLL-70BLI belongs to the category of memory products.

Use

It is primarily used for storing and retrieving digital information in electronic devices.

Characteristics

  • High storage capacity
  • Fast data access speed
  • Low power consumption
  • Reliable performance

Package

IS66WVE1M16EBLL-70BLI comes in a compact package that ensures easy integration into various electronic devices.

Essence

The essence of IS66WVE1M16EBLL-70BLI lies in its ability to provide efficient and reliable memory storage for electronic devices.

Packaging/Quantity

Each package of IS66WVE1M16EBLL-70BLI contains a single unit of the product.

Specifications

  • Model: IS66WVE1M16EBLL-70BLI
  • Memory Type: Synchronous DRAM (SDRAM)
  • Capacity: 1 Megabit x 16
  • Operating Voltage: 3.3V
  • Speed: 70 ns
  • Interface: Parallel
  • Package Type: BGA (Ball Grid Array)

Detailed Pin Configuration

The detailed pin configuration of IS66WVE1M16EBLL-70BLI is as follows:

  1. VDD
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. DQ8
  11. DQ9
  12. DQ10
  13. DQ11
  14. DQ12
  15. DQ13
  16. DQ14
  17. DQ15
  18. A0
  19. A1
  20. A2
  21. A3
  22. A4
  23. A5
  24. A6
  25. A7
  26. A8
  27. A9
  28. A10
  29. A11
  30. A12
  31. A13
  32. A14
  33. A15
  34. /CAS
  35. /RAS
  36. /WE
  37. /CS
  38. /OE
  39. /CKE
  40. VSS

Functional Features

  • High-speed data transfer
  • Burst mode operation
  • Auto-refresh and self-refresh modes
  • Low power standby mode
  • On-die termination (ODT) for improved signal integrity

Advantages and Disadvantages

Advantages

  • High storage capacity allows for storing large amounts of data
  • Fast data access speed ensures quick retrieval of information
  • Low power consumption helps in conserving energy
  • Reliable performance ensures data integrity and system stability

Disadvantages

  • Limited compatibility with certain older electronic devices
  • Relatively higher cost compared to other memory options

Working Principles

IS66WVE1M16EBLL-70BLI operates based on the principles of synchronous dynamic random-access memory (SDRAM). It stores digital information in a matrix of capacitors, which are organized into rows and columns. The data is accessed by sending specific commands and addresses to the memory module, allowing for efficient read and write operations.

Detailed Application Field Plans

IS66WVE1M16EBLL-70BLI finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Networking equipment - Consumer electronics - Industrial automation systems

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to IS66WVE1M16EBLL-70BLI are: - IS66WVE1M16EBLL-75BLI - IS66WVE1M16EBLL-80BLI - IS66WVE1M16EBLL-85BLI

These models differ in terms of speed, capacity, and other specifications, providing options to suit different requirements.

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Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan IS66WVE1M16EBLL-70BLI dalam solusi teknis

Sure! Here are 10 common questions and answers related to the application of IS66WVE1M16EBLL-70BLI in technical solutions:

Q1: What is IS66WVE1M16EBLL-70BLI? A1: IS66WVE1M16EBLL-70BLI is a specific type of memory chip, specifically a 16Mb (megabit) synchronous SRAM (Static Random Access Memory), designed for use in various technical solutions.

Q2: What are the key features of IS66WVE1M16EBLL-70BLI? A2: Some key features of IS66WVE1M16EBLL-70BLI include a capacity of 16Mb, synchronous operation, low power consumption, and a speed rating of 70BLI.

Q3: What are the typical applications of IS66WVE1M16EBLL-70BLI? A3: IS66WVE1M16EBLL-70BLI can be used in a wide range of applications such as networking equipment, telecommunications systems, industrial automation, medical devices, and automotive electronics.

Q4: What is the operating voltage range for IS66WVE1M16EBLL-70BLI? A4: The operating voltage range for IS66WVE1M16EBLL-70BLI is typically between 2.25V and 2.75V.

Q5: Does IS66WVE1M16EBLL-70BLI support multiple read and write operations simultaneously? A5: Yes, IS66WVE1M16EBLL-70BLI supports multiple read and write operations simultaneously, making it suitable for high-performance applications.

Q6: Can IS66WVE1M16EBLL-70BLI operate at high temperatures? A6: Yes, IS66WVE1M16EBLL-70BLI is designed to operate reliably at high temperatures, typically up to 85 degrees Celsius.

Q7: What is the data retention capability of IS66WVE1M16EBLL-70BLI? A7: IS66WVE1M16EBLL-70BLI has a data retention capability of at least 10 years, ensuring long-term reliability of stored information.

Q8: Does IS66WVE1M16EBLL-70BLI have any built-in error correction mechanisms? A8: No, IS66WVE1M16EBLL-70BLI does not have built-in error correction mechanisms. Additional error correction techniques may need to be implemented if required.

Q9: Can IS66WVE1M16EBLL-70BLI be used in battery-powered devices? A9: Yes, IS66WVE1M16EBLL-70BLI's low power consumption makes it suitable for use in battery-powered devices where energy efficiency is crucial.

Q10: Is IS66WVE1M16EBLL-70BLI a surface-mount device? A10: Yes, IS66WVE1M16EBLL-70BLI is available in a surface-mount package, making it easy to integrate into PCB (Printed Circuit Board) designs.

Please note that these answers are general and may vary depending on specific product documentation or manufacturer specifications.