IS66WV51216DBLL-55BLI

Product Overview

Category

IS66WV51216DBLL-55BLI belongs to the category of semiconductor memory devices.

Use

It is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Large storage capacity
• Low power consumption
• Compact package size
• Reliable performance

Package

IS66WV51216DBLL-55BLI is available in a Ball Grid Array (BGA) package.

Essence

The essence of IS66WV51216DBLL-55BLI lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

IS66WV51216DBLL-55BLI is typically packaged in reels or trays, with varying quantities depending on customer requirements.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 512 Megabits (64 Megabytes)
• Organization: 16M words x 16 bits
• Operating Voltage: 3.3V
• Speed Grade: -55BLI (operating frequency of 55 MHz)
• Interface: Parallel
• Access Time: 10 ns
• Refresh Mode: Auto-refresh and self-refresh
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

IS66WV51216DBLL-55BLI has a total of 54 pins. The pin configuration is as follows:

1. VDDQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSSQ
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VDDQ
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. /CAS
37. /RAS
38. /WE
39. /OE
40. /UB
41. /LB
42. CLK
43. CKE
44. /CS
45. /CKE
46. /DQM0
47. /DQM1
48. VSS
49. VDD
50. NC
51. NC
52. NC
53. NC
54. NC

Functional Features

• High-speed data transfer
• Burst mode operation
• On-chip address and control registers
• Auto and self-refresh modes for power-saving
• Easy interfacing with other components

Advantages and Disadvantages

Advantages

• Fast data access and retrieval
• Large storage capacity
• Low power consumption
• Compact package size
• Reliable performance

Disadvantages

• Limited compatibility with older systems that do not support SDRAM technology
• Higher cost compared to some other memory technologies

Working Principles

IS66WV51216DBLL-55BLI operates based on the principles of synchronous dynamic random-access memory (SDRAM). It stores digital information in a matrix of capacitors, which are organized into rows and columns. The data is accessed by sending specific address signals to select the desired row and column, allowing for fast read and write operations.

Detailed Application Field Plans

IS66WV51216DBLL-55BLI finds applications in various electronic devices and systems, including: - Personal computers - Laptops and notebooks - Servers - Networking equipment - Mobile phones and tablets - Automotive electronics - Industrial control systems - Medical devices

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to IS66WV51216DBLL-55BLI include: - MT48LC32M16A2P-75: Micron Technology Inc. - K4S561632H-UC60: Samsung Electronics Co., Ltd. - HYB18T512800AF-3S: Infineon Technologies AG - AS4C32M16SB-7TCN: Alliance Memory Inc. - M12L64164A-7TG: Macronix International Co., Ltd.

These alternative models provide comparable specifications and can be considered as substitutes based on specific requirements and compatibility with the target system.