IS61VF51236A-7.5B3I-TR

Product Overview

Category

IS61VF51236A-7.5B3I-TR belongs to the category of semiconductor memory products.

Use

It is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High-speed operation: Enables fast read and write access.
• Large storage capacity: Offers 512 megabits (64 megabytes) of memory space.
• Low power consumption: Optimized for energy efficiency.
• RoHS compliant: Free from hazardous substances.

Package

IS61VF51236A-7.5B3I-TR is available in a small form factor package, commonly known as Thin Small Outline Package (TSOP). This package ensures easy integration into various electronic devices.

Essence

The essence of IS61VF51236A-7.5B3I-TR lies in its ability to provide reliable and high-performance non-volatile memory storage for electronic systems.

Packaging/Quantity

IS61VF51236A-7.5B3I-TR is typically packaged in reels or trays, with a quantity of 2500 units per reel/tray.

Specifications

• Organization: 512Mbit (32M x 16)
• Voltage Range: 2.7V - 3.6V
• Access Time: 70ns
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Package Type: TSOP

Detailed Pin Configuration

The pin configuration of IS61VF51236A-7.5B3I-TR is as follows:

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. A8
10. A9
11. A10
12. A11
13. A12
14. A13
15. A14
16. A15
17. VCC
18. /WE
19. /OE
20. CE1
21. CE2
22. CE3
23. CE4
24. /UBS
25. /LBS
26. /BYTE
27. DQ0
28. DQ1
29. DQ2
30. DQ3
31. DQ4
32. DQ5
33. DQ6
34. DQ7
35. DQ8
36. DQ9
37. DQ10
38. DQ11
39. DQ12
40. DQ13
41. DQ14
42. DQ15
43. VSS

Functional Features

• Random access: Allows data to be read from or written to any memory location.
• Page mode operation: Enhances performance by enabling consecutive data transfers within a page.
• Automatic sleep mode: Reduces power consumption during idle periods.
• Built-in error correction code (ECC): Ensures data integrity and reliability.

Advantages and Disadvantages

Advantages

• Non-volatile nature ensures data retention even in the absence of power.
• High-speed operation enables quick data access.
• Large storage capacity accommodates extensive data requirements.
• Low power consumption prolongs battery life in portable devices.
• RoHS compliance promotes environmental friendliness.

Disadvantages

• Limited endurance: The memory cells have a finite number of write cycles before they may fail.
• Relatively higher cost compared to volatile memory alternatives.

Working Principles

IS61VF51236A-7.5B3I-TR utilizes flash memory technology to store and retrieve data. It employs a combination of floating-gate transistors and charge storage mechanisms to retain information even when power is turned off. The memory cells are organized in a matrix, allowing for efficient read and write operations.

Detailed Application Field Plans

IS61VF51236A-7.5B3I-TR finds applications in various electronic devices and systems, including but not limited to: - Personal computers - Laptops and notebooks - Smartphones and tablets - Digital cameras - Automotive electronics - Industrial control systems - Medical devices - Networking equipment

Detailed and Complete Alternative Models

1. IS61LV51216AL-10TLI: 512Mbit Low Voltage CMOS Static RAM
2. IS61WV51216BLL-10TLI: 512Mbit Wide Voltage CMOS Static RAM
3. IS61LV25616AL-10TLI: 256Mbit Low Voltage CMOS Static RAM
4. IS61LV