IS42VM32160D-75BLI

Product Overview

Category

IS42VM32160D-75BLI belongs to the category of dynamic random-access memory (DRAM) chips.

Use

This product is primarily used in electronic devices such as computers, smartphones, and tablets for storing and accessing data quickly.

Characteristics

• High-speed data access
• Large storage capacity
• Low power consumption
• Compact package size

Package

IS42VM32160D-75BLI is available in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of IS42VM32160D-75BLI lies in its ability to provide fast and efficient data storage and retrieval in electronic devices.

Packaging/Quantity

This product is typically packaged in trays or reels and is available in various quantities depending on customer requirements.

Specifications

• Memory Type: DDR3 SDRAM
• Capacity: 2GB
• Speed: 1600MHz
• Voltage: 1.5V
• Organization: 256M words x 16 bits
• Refresh: Auto-refresh and self-refresh modes supported
• Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

The IS42VM32160D-75BLI chip has a total of 78 pins. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. VSS
37. BA0
38. BA1
39. RAS#
40. CAS#
41. WE#
42. CS#
43. VDD
44. VSS
45. DM0
46. DM1
47. VSS
48. DQS0#
49. DQS0
50. VSS
51. DQS1#
52. DQS1
53. VSS
54. DQS2#
55. DQS2
56. VSS
57. DQS3#
58. DQS3
59. VSS
60. VREF
61. VSS
62. ODT0#
63. ODT0
64. VSS
65. ODT1#
66. ODT1
67. VSS
68. ODT2#
69. ODT2
70. VSS
71. ODT3#
72. ODT3
73. VSS
74. VDD
75. VSS
76. RESET#
77. CKE
78. VDD

Functional Features

• High-speed data transfer rate
• Support for burst mode operations
• On-die termination (ODT) for improved signal integrity
• Auto and self-refresh modes for power-saving
• Error correction code (ECC) support for data reliability

Advantages and Disadvantages

Advantages

• Fast data access and transfer speeds
• Large storage capacity
• Low power consumption
• Compact package size

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited endurance due to the nature of DRAM cells

Working Principles

IS42VM32160D-75BLI operates based on the principles of dynamic random-access memory. It stores data in capacitors within its memory cells, which need to be periodically refreshed to maintain the stored information. When a read or write operation is performed, the data is accessed by activating the appropriate row and column addresses.

Detailed Application Field Plans

IS42VM32160D-75BLI finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Mobile phones - Tablets - Gaming consoles

Detailed and Complete Alternative Models

Some alternative models to IS42VM32160D-75BLI include: - IS42S16400F-7TLI - MT41K256M16TW-107:P - K4B2G1646E-B