IS42S32160F-6BL

Product Overview

Category

IS42S32160F-6BL belongs to the category of dynamic random access memory (DRAM) modules.

Use

This product is primarily used in electronic devices such as computers, laptops, servers, and other computing systems that require high-speed data storage and retrieval.

Characteristics

• High-speed operation
• Large storage capacity
• Low power consumption
• Compact package size
• Reliable performance

Package

IS42S32160F-6BL is available in a small outline dual in-line memory module (SO-DIMM) package.

Essence

The essence of IS42S32160F-6BL lies in its ability to provide fast and efficient data storage and retrieval capabilities for various electronic devices.

Packaging/Quantity

IS42S32160F-6BL is typically packaged in trays or reels and is available in different quantities depending on the manufacturer's specifications.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Memory Size: 512 Megabytes (MB)
• Organization: 32 Megabytes x 16 bits
• Speed: 6 nanoseconds (ns)
• Voltage: 3.3 volts (V)
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

IS42S32160F-6BL follows a standard pin configuration for SO-DIMM modules. The detailed pinout is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. VSS
19. A0
20. A1
21. A2
22. A3
23. A4
24. A5
25. A6
26. A7
27. A8
28. A9
29. A10
30. A11
31. A12
32. A13
33. A14
34. A15
35. /CAS
36. /RAS
37. /WE
38. /CS
39. /CKE
40. VDDQ

Functional Features

• High-speed data transfer rate
• Burst mode operation for efficient data access
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Programmable CAS latency for flexible performance optimization

Advantages and Disadvantages

Advantages

• Fast and reliable data storage and retrieval
• Low power consumption
• Compact form factor
• Suitable for various computing systems

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited storage capacity compared to non-volatile memory options

Working Principles

IS42S32160F-6BL operates based on the principles of synchronous dynamic random access memory. It stores data in a matrix of capacitors, which are organized into rows and columns. The data is accessed by activating specific rows and columns using control signals. The stored charge in the capacitors represents the binary data.

Detailed Application Field Plans

IS42S32160F-6BL finds applications in a wide range of electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Networking equipment - Industrial automation systems - Medical devices

Detailed and Complete Alternative Models

Some alternative models to IS42S32160F-6BL that offer similar functionality and specifications include: - MT48LC32M16A2P-75:G by Micron Technology Inc. - K4S561632H-UC75 by Samsung Electronics Co., Ltd. - HYB39S512800T-7 by Infineon Technologies AG - M5M5256DFP-70LLI by Renesas Electronics Corporation

These alternative models can be considered based on specific requirements and availability.

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