IS42S32160B-75EBLI

Product Overview

Category: Integrated Circuit (IC)

Use: Memory module for electronic devices

Characteristics: - High-speed synchronous dynamic random-access memory (SDRAM) - Low power consumption - Large storage capacity - Compact package size - Reliable performance

Package: BGA (Ball Grid Array)

Essence: The IS42S32160B-75EBLI is a high-performance SDRAM module designed to provide fast and efficient memory storage for various electronic devices.

Packaging/Quantity: The IS42S32160B-75EBLI is typically packaged in trays or reels, with each tray/reel containing a specific quantity of modules. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Memory Size: 512 Megabits (64 Megabytes)
• Organization: 32M words x 16 bits x 4 banks
• Data Rate: 133 MHz (max)
• Operating Voltage: 2.5V ± 0.2V
• Interface: Parallel
• Package Dimensions: 90-ball BGA
• Temperature Range: Commercial (0°C to +70°C)
• Refresh Mode: Auto-refresh and self-refresh

Detailed Pin Configuration

The IS42S32160B-75EBLI has a 90-ball BGA package with pins distributed across its surface. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. A16
37. A17
38. A18
39. A19
40. A20
41. BA0
42. BA1
43. RAS#
44. CAS#
45. WE#
46. CS#
47. CKE
48. CLK
49. DQM0
50. DQM1
51. VDD
52. VSS
53. VREF
54. VSS
55. NC
56. NC
57. NC
58. NC
59. NC
60. NC
61. NC
62. NC
63. NC
64. NC
65. NC
66. NC
67. NC
68. NC
69. NC
70. NC
71. NC
72. NC
73. NC
74. NC
75. NC
76. NC
77. NC
78. NC
79. NC
80. NC
81. NC
82. NC
83. NC
84. NC
85. NC
86. NC
87. NC
88. NC
89. NC
90. VDD

Functional Features

• High-speed data transfer rate for efficient memory access.
• Auto-refresh and self-refresh modes to maintain data integrity during power fluctuations.
• Low power consumption for energy-efficient operation.
• Four independent banks for simultaneous access to different memory locations.
• Burst mode operation for faster consecutive data retrieval.

Advantages and Disadvantages

Advantages: - High-speed performance enhances overall system responsiveness. - Large storage capacity allows for extensive data storage. - Low power consumption prolongs battery life in portable devices. - Compact package size enables integration into space-constrained designs. - Reliable performance ensures data integrity and system stability.

Disadvantages: - Limited compatibility with certain older systems that do not support SDRAM technology. - Higher cost compared to other memory modules with lower specifications. - Requires proper handling and installation techniques due to the delicate nature of BGA packages.

Working Principles

The IS42S32160B-75EBLI operates based on the principles of synchronous dynamic random-access memory (SDRAM). It stores data in a digital format using capacitors to represent binary values. The memory cells are organized into multiple banks, allowing for simultaneous access to different memory locations. The module communicates with the host device through a parallel interface, utilizing clock signals for synchronized data transfer