IS42S16100H-6TL-TR

Product Overview

Category

IS42S16100H-6TL-TR belongs to the category of dynamic random access memory (DRAM) modules.

Use

This product is primarily used in computer systems and electronic devices for storing and retrieving data quickly and efficiently.

Characteristics

• High-speed data access
• Large storage capacity
• Low power consumption
• Compact size
• Reliable performance

Package

IS42S16100H-6TL-TR is available in a small outline, thin profile (TSOP) package.

Essence

The essence of IS42S16100H-6TL-TR lies in its ability to provide fast and reliable data storage and retrieval in various electronic applications.

Packaging/Quantity

IS42S16100H-6TL-TR is typically packaged in reels and comes in quantities suitable for mass production.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Organization: 16M words x 1 bit
• Data Rate: 166 MHz
• Voltage Supply: 3.3V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Pin Count: 54 pins

Detailed Pin Configuration

The pin configuration of IS42S16100H-6TL-TR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. A0
19. A1
20. A2
21. A3
22. A4
23. A5
24. A6
25. A7
26. A8
27. A9
28. A10
29. A11
30. A12
31. A13
32. A14
33. A15
34. /CAS
35. /RAS
36. /WE
37. /CS0
38. /CS1
39. /CS2
40. /CS3
41. /CKE
42. /CLK
43. /DQM0
44. /DQM1
45. /DQS0
46. DQS0#
47. /DQS1
48. DQS1#
49. VSS
50. VSS
51. VSS
52. VSS
53. VDDQ
54. VDDQ

Functional Features

• High-speed data transfer with synchronous operation
• Burst mode for efficient data access
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Programmable CAS latency for flexibility in system design

Advantages and Disadvantages

Advantages

• Fast data access and transfer speeds
• Large storage capacity
• Low power consumption
• Compact size for space-constrained applications
• Reliable performance in various operating conditions

Disadvantages

• Higher cost compared to other memory technologies
• Limited scalability beyond a certain capacity
• Sensitive to electrical noise and interference

Working Principles

IS42S16100H-6TL-TR operates based on the principles of synchronous dynamic random access memory. It stores data in a matrix of capacitors, which are organized into rows and columns. The memory controller sends commands and addresses to access specific data stored in the memory cells. The synchronous operation ensures that data is transferred in sync with a clock signal, enabling high-speed data access.

Detailed Application Field Plans

IS42S16100H-6TL-TR finds applications in various electronic devices and systems, including: - Personal computers - Laptops and notebooks - Servers - Networking equipment - Mobile devices - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models to IS42S16100H-6TL-TR include: - MT48LC16M16A2P-75 - K4S561632E-UC60 - HYB39S256160FE-7.5

These models offer similar specifications and functionality, providing options for different design requirements.

In conclusion, IS42S16100H-6TL-TR is a high-performance synchronous DRAM module that offers fast data access, large storage capacity, and low power consumption. It finds applications in various electronic devices and systems, providing reliable data storage and retrieval capabilities.