Gambar mungkin merupakan representasi.
Lihat spesifikasi untuk detail produk.
IRF6644TR1

IRF6644TR1

Product Overview

Category

The IRF6644TR1 belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications, such as voltage regulation and power switching.

Characteristics

  • High current-carrying capability
  • Low on-state resistance
  • Fast switching speed
  • Low gate drive power loss

Package

The IRF6644TR1 is typically available in a TO-263 package.

Essence

This MOSFET is essential for efficient power control and management in various electronic systems.

Packaging/Quantity

It is usually supplied in reels with a specific quantity per reel, typically 250 or 500 units.

Specifications

  • Drain-Source Voltage (VDS): 60V
  • Continuous Drain Current (ID): 17A
  • RDS(ON) (Max) @ VGS = 10V: 8.5mΩ
  • Gate-Source Voltage (VGS) ±20V
  • Total Power Dissipation (PD): 110W

Detailed Pin Configuration

The IRF6644TR1 has a standard pin configuration with three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low conduction losses
  • High efficiency
  • Enhanced thermal performance
  • Reliable operation in various conditions

Advantages

  • High current-handling capability
  • Low on-state resistance leading to reduced power dissipation
  • Fast switching speed for improved efficiency
  • Wide operating voltage range

Disadvantages

  • Sensitivity to static electricity
  • Gate capacitance may require careful consideration in high-frequency applications

Working Principles

The IRF6644TR1 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. By modulating the gate-source voltage, the MOSFET can efficiently regulate power flow in electronic circuits.

Detailed Application Field Plans

The IRF6644TR1 finds extensive use in various applications, including: - Switching power supplies - Motor control - DC-DC converters - Battery management systems - LED lighting

Detailed and Complete Alternative Models

Some alternative models to the IRF6644TR1 include: - IRF6644PbF - IRF6644TRPBF - IRF6644TRLPBF - IRF6644TRLPBF

In conclusion, the IRF6644TR1 power MOSFET offers high-performance characteristics suitable for diverse power management applications, making it an essential component in modern electronic systems.

[Word Count: 397]

Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan IRF6644TR1 dalam solusi teknis

  1. What is the maximum drain-source voltage of IRF6644TR1?

    • The maximum drain-source voltage of IRF6644TR1 is 40V.
  2. What is the continuous drain current of IRF6644TR1?

    • The continuous drain current of IRF6644TR1 is 17A.
  3. What is the on-resistance of IRF6644TR1?

    • The on-resistance of IRF6644TR1 is typically 5.8mΩ at Vgs = 10V.
  4. What is the gate threshold voltage of IRF6644TR1?

    • The gate threshold voltage of IRF6644TR1 is typically 2V.
  5. What is the power dissipation of IRF6644TR1?

    • The power dissipation of IRF6644TR1 is 110W.
  6. What are the typical applications of IRF6644TR1?

    • IRF6644TR1 is commonly used in high-current, high-speed switching applications such as motor control, power supplies, and DC-DC converters.
  7. What is the operating temperature range of IRF6644TR1?

    • The operating temperature range of IRF6644TR1 is -55°C to 175°C.
  8. Is IRF6644TR1 RoHS compliant?

    • Yes, IRF6644TR1 is RoHS compliant, making it suitable for use in environmentally sensitive applications.
  9. What is the package type of IRF6644TR1?

    • IRF6644TR1 comes in a D2PAK package, which is suitable for surface mount applications.
  10. Does IRF6644TR1 have built-in ESD protection?

    • No, IRF6644TR1 does not have built-in ESD protection and should be handled with appropriate ESD precautions during assembly and handling.