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IDT71V67602S133BQ
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IDT71V67602S133BQ

Product Overview

Category: Integrated Circuit (IC)

Use: The IDT71V67602S133BQ is a high-speed synchronous static random-access memory (SRAM) designed for use in various electronic devices and systems. It provides fast and reliable data storage and retrieval capabilities.

Characteristics: - High-speed operation - Low power consumption - Large storage capacity - Synchronous interface - Easy integration into existing systems

Package: The IDT71V67602S133BQ is available in a compact and durable package, ensuring protection against external factors such as moisture and physical damage.

Essence: This IC serves as a crucial component in electronic devices, enabling efficient data storage and retrieval operations.

Packaging/Quantity: The IDT71V67602S133BQ is typically sold in reels or trays, with each reel or tray containing a specific quantity of ICs. The exact packaging and quantity may vary depending on the supplier.

Specifications

  • Memory Type: Synchronous SRAM
  • Organization: 8 Meg x 16
  • Supply Voltage: 3.3V
  • Access Time: 6 ns
  • Operating Temperature Range: -40°C to +85°C
  • Package Type: 48-pin TSOP II

Detailed Pin Configuration

The IDT71V67602S133BQ features a 48-pin TSOP II package with the following pin configuration:

  1. VDDQ
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. GND
  11. DQ8
  12. DQ9
  13. DQ10
  14. DQ11
  15. DQ12
  16. DQ13
  17. DQ14
  18. DQ15
  19. VDDQ
  20. A0
  21. A1
  22. A2
  23. A3
  24. A4
  25. A5
  26. A6
  27. A7
  28. A8
  29. A9
  30. A10
  31. A11
  32. A12
  33. A13
  34. A14
  35. A15
  36. /WE
  37. /OE
  38. /CE2
  39. /CE1
  40. /UBS
  41. /LDS
  42. /RAS
  43. /CAS
  44. /CS
  45. CLK
  46. /CLK
  47. VDD
  48. GND

Functional Features

  • High-speed synchronous operation allows for efficient data transfer.
  • Low power consumption ensures energy efficiency in electronic devices.
  • Large storage capacity enables the handling of extensive data requirements.
  • Synchronous interface simplifies integration into existing systems.

Advantages and Disadvantages

Advantages: - Fast and reliable data storage and retrieval capabilities. - Low power consumption contributes to energy efficiency. - Easy integration into existing systems.

Disadvantages: - Limited storage capacity compared to other memory technologies. - Higher cost compared to alternative memory solutions.

Working Principles

The IDT71V67602S133BQ operates based on the principles of synchronous static random-access memory (SRAM). It utilizes a synchronous interface, allowing for precise timing and efficient data transfer between the memory and the host system. The SRAM cells within the IC store data as long as power is supplied, ensuring data retention even during power interruptions.

Detailed Application Field Plans

The IDT71V67602S133BQ finds applications in various electronic devices and systems, including but not limited to: - Networking equipment - Telecommunications devices - Industrial control systems - Automotive electronics - Consumer electronics

Detailed and Complete Alternative Models

  1. Micron MT48LC8M16A2P-75
  2. Samsung K6R4016V1D-UI10
  3. Cypress CY7C1041DV33-10ZSXI
  4. Renesas R1LV0416DSB-5SI

These alternative models offer similar functionality and specifications to the IDT71V67602S133BQ, providing options for different design requirements and supplier preferences.

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Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan IDT71V67602S133BQ dalam solusi teknis

Sure! Here are 10 common questions and answers related to the application of IDT71V67602S133BQ in technical solutions:

  1. Question: What is the IDT71V67602S133BQ?
    Answer: The IDT71V67602S133BQ is a synchronous SRAM (Static Random Access Memory) device with a capacity of 8 Megabits (Mb).

  2. Question: What is the operating voltage range for this device?
    Answer: The IDT71V67602S133BQ operates at a voltage range of 3.0V to 3.6V.

  3. Question: What is the maximum clock frequency supported by this SRAM?
    Answer: This SRAM supports a maximum clock frequency of 133 MHz.

  4. Question: Can I use this SRAM in battery-powered devices?
    Answer: Yes, the IDT71V67602S133BQ is suitable for battery-powered devices as it operates at low power consumption levels.

  5. Question: What is the access time of this SRAM?
    Answer: The access time of the IDT71V67602S133BQ is 8 ns.

  6. Question: Does this SRAM support burst mode operation?
    Answer: Yes, this SRAM supports burst mode operation with various burst lengths.

  7. Question: What is the pin configuration of this SRAM?
    Answer: The IDT71V67602S133BQ has a 54-pin TSOP-II package with specific pin assignments for data, address, control signals, and power.

  8. Question: Can I interface this SRAM with microcontrollers or processors?
    Answer: Yes, this SRAM can be easily interfaced with microcontrollers or processors using standard memory interfaces like asynchronous or synchronous bus protocols.

  9. Question: Is this SRAM suitable for high-speed data buffering applications?
    Answer: Yes, the IDT71V67602S133BQ is well-suited for high-speed data buffering due to its fast access time and burst mode operation.

  10. Question: Can I use multiple IDT71V67602S133BQ devices in parallel for increased memory capacity?
    Answer: Yes, you can use multiple devices in parallel to increase the overall memory capacity in your technical solution.

Please note that these questions and answers are general and may vary depending on specific application requirements.