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IDT71V25761YSA183BQ8

IDT71V25761YSA183BQ8

Product Overview

Category

The IDT71V25761YSA183BQ8 belongs to the category of integrated circuits (ICs).

Use

This product is commonly used in electronic devices for data storage and retrieval purposes.

Characteristics

  • High-speed performance
  • Large storage capacity
  • Low power consumption
  • Reliable operation

Package

The IDT71V25761YSA183BQ8 is available in a compact surface mount package.

Essence

This IC serves as a crucial component in various electronic systems, enabling efficient data storage and retrieval operations.

Packaging/Quantity

The IDT71V25761YSA183BQ8 is typically packaged in reels or trays, with varying quantities depending on customer requirements.

Specifications

  • Memory Type: Static Random Access Memory (SRAM)
  • Organization: 256K x 16 bits
  • Operating Voltage: 3.3V
  • Access Time: 18 ns
  • Operating Temperature Range: -40°C to +85°C
  • Pin Count: 48

Detailed Pin Configuration

  1. VCC
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. A8
  11. A9
  12. A10
  13. A11
  14. A12
  15. A13
  16. A14
  17. A15
  18. OE#
  19. WE#
  20. I/O0
  21. I/O1
  22. I/O2
  23. I/O3
  24. I/O4
  25. I/O5
  26. I/O6
  27. I/O7
  28. I/O8
  29. I/O9
  30. I/O10
  31. I/O11
  32. I/O12
  33. I/O13
  34. I/O14
  35. I/O15
  36. GND
  37. NC
  38. NC
  39. NC
  40. NC
  41. NC
  42. NC
  43. NC
  44. NC
  45. NC
  46. NC
  47. NC
  48. NC

Functional Features

  • High-speed data access and retrieval
  • Non-volatile storage capability
  • Low power consumption
  • Easy integration into electronic systems
  • Reliable performance in various operating conditions

Advantages and Disadvantages

Advantages

  • Fast data access time
  • Large storage capacity
  • Low power consumption
  • Reliable operation

Disadvantages

  • Limited compatibility with certain system architectures
  • Higher cost compared to alternative memory technologies

Working Principles

The IDT71V25761YSA183BQ8 operates based on the principles of static random access memory (SRAM). It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The IC utilizes an array of transistors and capacitors to store and retrieve data quickly and efficiently.

Detailed Application Field Plans

The IDT71V25761YSA183BQ8 finds applications in various electronic devices and systems, including but not limited to: - Computer systems - Networking equipment - Telecommunications devices - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

  1. IDT71V25761S
  2. IDT71V25761L
  3. IDT71V25761SA
  4. IDT71V25761LA
  5. IDT71V25761SY
  6. IDT71V25761LY

These alternative models offer similar functionality and characteristics to the IDT71V25761YSA183BQ8, providing flexibility in design and compatibility with different system requirements.

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Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan IDT71V25761YSA183BQ8 dalam solusi teknis

Sure! Here are 10 common questions and answers related to the application of IDT71V25761YSA183BQ8 in technical solutions:

  1. Question: What is the IDT71V25761YSA183BQ8?
    Answer: The IDT71V25761YSA183BQ8 is a high-speed asynchronous SRAM (Static Random Access Memory) chip manufactured by Integrated Device Technology (IDT).

  2. Question: What is the capacity of the IDT71V25761YSA183BQ8?
    Answer: The IDT71V25761YSA183BQ8 has a capacity of 256K x 36 bits, which means it can store 256 kilobits of data organized into 36-bit words.

  3. Question: What is the operating voltage range for the IDT71V25761YSA183BQ8?
    Answer: The IDT71V25761YSA183BQ8 operates at a voltage range of 3.0V to 3.6V.

  4. Question: What is the access time of the IDT71V25761YSA183BQ8?
    Answer: The IDT71V25761YSA183BQ8 has an access time of 18ns, which refers to the time it takes for the memory to respond to a read or write operation.

  5. Question: Can the IDT71V25761YSA183BQ8 be used in industrial applications?
    Answer: Yes, the IDT71V25761YSA183BQ8 is suitable for use in industrial applications due to its wide operating temperature range and robust design.

  6. Question: Does the IDT71V25761YSA183BQ8 support simultaneous read and write operations?
    Answer: Yes, the IDT71V25761YSA183BQ8 supports simultaneous read and write operations, allowing for efficient data transfer.

  7. Question: What is the power consumption of the IDT71V25761YSA183BQ8?
    Answer: The power consumption of the IDT71V25761YSA183BQ8 depends on various factors such as operating frequency and data activity. Please refer to the datasheet for detailed information.

  8. Question: Can the IDT71V25761YSA183BQ8 be used in battery-powered devices?
    Answer: Yes, the IDT71V25761YSA183BQ8 can be used in battery-powered devices as it operates at a low voltage and has low standby power consumption.

  9. Question: Does the IDT71V25761YSA183BQ8 have built-in error correction capabilities?
    Answer: No, the IDT71V25761YSA183BQ8 does not have built-in error correction capabilities. External error correction techniques may need to be implemented if required.

  10. Question: Are there any specific design considerations when using the IDT71V25761YSA183BQ8?
    Answer: Yes, some design considerations include proper decoupling capacitors, signal integrity, and ensuring proper timing requirements are met. It is recommended to refer to the datasheet and application notes for detailed guidelines.

Please note that these answers are general and may vary depending on the specific requirements and use cases. It is always advisable to refer to the official documentation and consult with technical experts for accurate information.