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IDT71V25761YSA183BG8

IDT71V25761YSA183BG8

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics:
    • High-speed operation
    • Low power consumption
    • Large storage capacity
  • Package: BG8 package
  • Essence: Non-volatile memory
  • Packaging/Quantity: Individual units

Specifications

  • Memory Type: Static Random Access Memory (SRAM)
  • Organization: 256K x 16 bits
  • Operating Voltage: 3.3V
  • Access Time: 10 ns
  • Operating Temperature Range: -40°C to +85°C
  • Pin Count: 48 pins

Detailed Pin Configuration

The IDT71V25761YSA183BG8 has a total of 48 pins, which are assigned specific functions. The pin configuration is as follows:

  1. VCC
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. A8
  11. A9
  12. A10
  13. A11
  14. A12
  15. A13
  16. A14
  17. A15
  18. OE#
  19. CE#
  20. WE#
  21. I/O0
  22. I/O1
  23. I/O2
  24. I/O3
  25. I/O4
  26. I/O5
  27. I/O6
  28. I/O7
  29. I/O8
  30. I/O9
  31. I/O10
  32. I/O11
  33. I/O12
  34. I/O13
  35. I/O14
  36. I/O15
  37. VSS
  38. NC
  39. NC
  40. NC
  41. NC
  42. NC
  43. NC
  44. NC
  45. NC
  46. NC
  47. NC
  48. NC

Functional Features

  • High-speed operation allows for quick data access.
  • Low power consumption ensures energy efficiency.
  • Large storage capacity of 256K x 16 bits provides ample memory space.

Advantages and Disadvantages

Advantages

  • Fast access time enables efficient data retrieval.
  • Low power consumption prolongs battery life in portable devices.
  • Non-volatile memory retains data even when power is lost.

Disadvantages

  • Limited storage capacity compared to other memory technologies.
  • Relatively higher cost per bit compared to some alternative memory options.

Working Principles

The IDT71V25761YSA183BG8 is a static random access memory (SRAM) device. It stores data using flip-flops, which retain information as long as power is supplied. The memory cells are organized in a matrix of rows and columns, allowing for random access to any location within the memory array. When an address is provided, the corresponding data can be read or written.

Detailed Application Field Plans

The IDT71V25761YSA183BG8 is commonly used in various applications that require high-speed and non-volatile memory. Some potential application fields include:

  1. Computer systems
  2. Networking equipment
  3. Telecommunications devices
  4. Industrial control systems
  5. Automotive electronics

Detailed and Complete Alternative Models

  1. IDT71V25761S - Similar specifications but with a different package (SOJ)
  2. IDT71V25761SA - Similar specifications but with a different package (TSOP)
  3. IDT71V25761Y - Similar specifications but with a different package (FBGA)

These alternative models offer similar functionality and performance, but may differ in package type and pin configuration.

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Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan IDT71V25761YSA183BG8 dalam solusi teknis

Sure! Here are 10 common questions and answers related to the application of IDT71V25761YSA183BG8 in technical solutions:

  1. Question: What is IDT71V25761YSA183BG8?
    Answer: IDT71V25761YSA183BG8 is a specific model of synchronous static RAM (SRAM) manufactured by Integrated Device Technology (IDT).

  2. Question: What is the capacity of IDT71V25761YSA183BG8?
    Answer: The capacity of IDT71V25761YSA183BG8 is 32 megabits (Mb), which is equivalent to 4 megabytes (MB).

  3. Question: What is the operating voltage range for IDT71V25761YSA183BG8?
    Answer: The operating voltage range for IDT71V25761YSA183BG8 is typically between 3.0V and 3.6V.

  4. Question: What is the access time of IDT71V25761YSA183BG8?
    Answer: The access time of IDT71V25761YSA183BG8 is 18 nanoseconds (ns).

  5. Question: Can IDT71V25761YSA183BG8 be used in industrial applications?
    Answer: Yes, IDT71V25761YSA183BG8 is suitable for use in industrial applications due to its wide operating temperature range and robust design.

  6. Question: Does IDT71V25761YSA183BG8 support multiple read and write operations simultaneously?
    Answer: No, IDT71V25761YSA183BG8 does not support multiple read and write operations simultaneously. It operates in a single-port mode.

  7. Question: Is IDT71V25761YSA183BG8 compatible with common microcontrollers and processors?
    Answer: Yes, IDT71V25761YSA183BG8 is compatible with a wide range of microcontrollers and processors that support SRAM interfaces.

  8. Question: Can IDT71V25761YSA183BG8 be used in battery-powered devices?
    Answer: Yes, IDT71V25761YSA183BG8 can be used in battery-powered devices as it operates within the typical voltage range of portable electronics.

  9. Question: What are the typical applications of IDT71V25761YSA183BG8?
    Answer: IDT71V25761YSA183BG8 is commonly used in networking equipment, telecommunications systems, industrial automation, and embedded systems.

  10. Question: Does IDT71V25761YSA183BG8 have any built-in error correction capabilities?
    Answer: No, IDT71V25761YSA183BG8 does not have built-in error correction capabilities. Additional error correction mechanisms may need to be implemented if required.

Please note that these answers are general and may vary depending on specific technical requirements and use cases.