IDT, Integrated Device Technology Inc
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IDT71V25761YS200PF8
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IDT71V25761YS200PF8

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
  • Package: 100-pin thin quad flat pack (TQFP)
  • Essence: Provides fast and reliable data storage and retrieval capabilities
  • Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

  • Memory Type: Synchronous SRAM
  • Density: 256K x 36 bits
  • Operating Voltage: 2.5V
  • Access Time: 10 ns
  • Operating Temperature Range: -40°C to +85°C
  • Data Retention: Greater than 10 years
  • Interface: Parallel
  • Clock Frequency: 200 MHz
  • Power Dissipation: 1.8W (typical)

Pin Configuration

The IDT71V25761YS200PF8 has a total of 100 pins. The pin configuration is as follows:

  1. VDDQ
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. DQ8
  11. DQ9
  12. DQ10
  13. DQ11
  14. DQ12
  15. DQ13
  16. DQ14
  17. DQ15
  18. DQ16
  19. DQ17
  20. DQ18
  21. DQ19
  22. DQ20
  23. DQ21
  24. DQ22
  25. DQ23
  26. DQ24
  27. DQ25
  28. DQ26
  29. DQ27
  30. DQ28
  31. DQ29
  32. DQ30
  33. DQ31
  34. VSSQ
  35. CLK
  36. /CLK
  37. /CS1
  38. /CS2
  39. /OE
  40. /WE
  41. A0
  42. A1
  43. A2
  44. A3
  45. A4
  46. A5
  47. A6
  48. A7
  49. A8
  50. A9
  51. A10
  52. A11
  53. A12
  54. A13
  55. A14
  56. A15
  57. A16
  58. A17
  59. A18
  60. A19
  61. A20
  62. A21
  63. A22
  64. A23
  65. A24
  66. A25
  67. A26
  68. A27
  69. A28
  70. A29
  71. A30
  72. A31
  73. VDD
  74. VSS
  75. VDDQ
  76. DQ32
  77. DQ33
  78. DQ34
  79. DQ35
  80. DQ36
  81. DQ37
  82. DQ38
  83. DQ39
  84. DQ40
  85. DQ41
  86. DQ42
  87. DQ43
  88. DQ44
  89. DQ45
  90. DQ46
  91. DQ47
  92. DQ48
  93. DQ49
  94. DQ50
  95. DQ51
  96. DQ52
  97. DQ53
  98. DQ54
  99. DQ55
  100. VSSQ

Functional Features

  • High-speed operation with a clock frequency of 200 MHz
  • Low-power consumption for energy-efficient applications
  • Synchronous interface for easy integration into digital systems
  • Reliable data retention for long-term storage requirements
  • Wide operating temperature range for versatile usage scenarios

Advantages and Disadvantages

Advantages: - High-speed performance enables quick data access - Low-power consumption reduces energy usage - Synchronous interface simplifies system integration - Reliable data retention ensures data integrity - Wide operating temperature range allows for various applications

Disadvantages: - Limited memory density compared to other memory devices - Parallel interface may require additional circuitry for certain applications - Higher power dissipation compared to some low-power memory alternatives

Working Principles

The IDT71V25761YS200PF8 is a synchronous SRAM that operates based on the synchronous interface and clock signal. It stores and retrieves data in a parallel manner, allowing for fast access times. The device

Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan IDT71V25761YS200PF8 dalam solusi teknis

Sure! Here are 10 common questions and answers related to the application of IDT71V25761YS200PF8 in technical solutions:

  1. Question: What is the IDT71V25761YS200PF8?
    Answer: The IDT71V25761YS200PF8 is a high-speed, low-power CMOS static RAM (SRAM) device with a capacity of 256K x 36 bits.

  2. Question: What are the key features of the IDT71V25761YS200PF8?
    Answer: Some key features include a synchronous interface, fast access times, low power consumption, and a wide operating voltage range.

  3. Question: What is the typical application of the IDT71V25761YS200PF8?
    Answer: This SRAM device is commonly used in networking equipment, telecommunications systems, industrial automation, and other applications that require high-speed data storage.

  4. Question: What is the operating voltage range for the IDT71V25761YS200PF8?
    Answer: The device operates within a voltage range of 3.0V to 3.6V.

  5. Question: What is the maximum clock frequency supported by the IDT71V25761YS200PF8?
    Answer: The device supports a maximum clock frequency of 200 MHz.

  6. Question: Does the IDT71V25761YS200PF8 have any power-saving features?
    Answer: Yes, it has a deep power-down mode that reduces power consumption when the device is not actively being accessed.

  7. Question: Can the IDT71V25761YS200PF8 be used in battery-powered devices?
    Answer: Yes, the low power consumption of this SRAM device makes it suitable for use in battery-powered applications.

  8. Question: What is the package type for the IDT71V25761YS200PF8?
    Answer: It is available in a 100-pin TQFP (Thin Quad Flat Package) package.

  9. Question: Does the IDT71V25761YS200PF8 support multiple chip enable signals?
    Answer: Yes, it supports two independent chip enable inputs for flexible memory bank selection.

  10. Question: Can the IDT71V25761YS200PF8 operate in harsh environments?
    Answer: The device is not specifically designed for harsh environments, but it can operate within the specified temperature and voltage ranges for industrial applications.

Please note that these answers are general and may vary depending on specific application requirements.