IDT71V25761SA183BQ8

Product Overview

Category

The IDT71V25761SA183BQ8 belongs to the category of integrated circuits (ICs).

Use

This product is commonly used in electronic devices for memory storage and retrieval purposes.

Characteristics

• High-speed performance
• Large storage capacity
• Low power consumption
• Reliable data retention
• Easy integration into circuit designs

Package

The IDT71V25761SA183BQ8 is available in a compact surface-mount package, which facilitates its installation on printed circuit boards (PCBs).

Essence

This IC serves as a crucial component in electronic systems, enabling efficient data storage and retrieval operations.

Packaging/Quantity

The IDT71V25761SA183BQ8 is typically packaged in reels or trays, with each containing a specific quantity of ICs. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 256K x 16 bits
• Operating Voltage: 3.3V
• Access Time: 18 ns
• Data Retention: More than 10 years
• Operating Temperature Range: -40°C to +85°C
• Package Type: 48-pin Ball Grid Array (BGA)

Detailed Pin Configuration

The IDT71V25761SA183BQ8 features a 48-pin BGA package with the following pin configuration:

1. VDDQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. VSSQ
19. A0
20. A1
21. A2
22. A3
23. A4
24. A5
25. A6
26. A7
27. A8
28. A9
29. A10
30. A11
31. A12
32. A13
33. A14
34. A15
35. CE2#
36. CE1#
37. WE#
38. OE#
39. UB#
40. LB#
41. CE3#
42. CE4#
43. CE5#
44. CE6#
45. CE7#
46. VDD
47. VSS
48. NC

Functional Features

• High-speed data access and retrieval
• Simultaneous read and write operations
• Easy interfacing with other components
• Low power consumption in standby mode
• Automatic power-down when not in use

Advantages and Disadvantages

Advantages

• Fast data access and retrieval, enhancing overall system performance
• Large storage capacity for storing a significant amount of data
• Low power consumption, contributing to energy efficiency
• Reliable data retention, ensuring data integrity over time
• Easy integration into circuit designs, simplifying the development process

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited scalability in terms of storage capacity
• Susceptible to electromagnetic interference (EMI) due to its high-speed operation

Working Principles

The IDT71V25761SA183BQ8 operates based on the principles of static random access memory (SRAM). It utilizes flip-flops to store and retrieve data, allowing for fast and random access to memory locations. The IC maintains data integrity as long as power is supplied, and it requires periodic refresh cycles to prevent data loss.

Detailed Application Field Plans

The IDT71V25761SA183BQ8 finds applications in various electronic systems, including but not limited to:

1. Computer systems
2. Networking equipment
3. Telecommunications devices
4. Industrial control systems
5. Automotive electronics
6. Consumer electronics

Detailed and Complete Alternative Models

1. Micron MT48LC16M16A2P-75IT: 256Mb x 16-bit SRAM, 3.3V, 18 ns access time, TSOP package.
2. Samsung K6R4016V1D-UI10: 256K x 16-bit SRAM, 3.3V, 15 ns access time, TSOP package.
3. Cypress CY62157EV30LL-45ZSXI: 256K x 16-bit SRAM, 3.3V, 45 ns access time, BGA package.

These alternative models offer similar functionality and can be considered