IDT71V256SA20PZ8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, static random-access memory (SRAM)
• Package: 44-pin Plastic Thin Quad Flat Pack (TQFP)
• Essence: Provides fast and reliable data storage and retrieval capabilities
• Packaging/Quantity: Available in tape and reel packaging, with a quantity of 250 units per reel

Specifications

• Memory Type: SRAM
• Density: 256 kilobits (32 kilobytes)
• Access Time: 20 nanoseconds
• Operating Voltage: 3.3 volts
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Greater than 10 years
• Organization: 32K x 8 bits
• Interface: Parallel

Pin Configuration

The IDT71V256SA20PZ8 has a total of 44 pins. The pin configuration is as follows:

1. VCC
2. A12
3. A7
4. A6
5. A5
6. A4
7. A3
8. A2
9. A1
10. A0
11. I/O0
12. I/O1
13. I/O2
14. I/O3
15. I/O4
16. I/O5
17. I/O6
18. I/O7
19. GND
20. CE1
21. CE2
22. WE
23. OE
24. BYTE
25. A8
26. A9
27. A11
28. A10
29. I/O8
30. I/O9
31. I/O10
32. I/O11
33. I/O12
34. I/O13
35. I/O14
36. I/O15
37. VCCQ
38. VCCQ
39. GNDQ
40. GNDQ
41. VCCQ
42. VCCQ
43. GNDQ
44. GNDQ

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low-power consumption makes it suitable for battery-powered devices.
• Static design eliminates the need for refreshing data, ensuring data integrity.
• Easy integration into various electronic systems due to its parallel interface.

Advantages and Disadvantages

Advantages: - Fast access time enables efficient data processing. - Low power consumption prolongs battery life in portable devices. - Reliable data storage with no need for periodic refreshing. - Versatile integration options due to the parallel interface.

Disadvantages: - Limited storage capacity compared to other memory technologies. - Higher cost per bit compared to dynamic random-access memory (DRAM). - Susceptible to data loss in case of power failure without proper backup measures.

Working Principles

The IDT71V256SA20PZ8 is a static random-access memory (SRAM) device that stores data using flip-flop circuits. It operates by storing each bit of data in a dedicated flip-flop, allowing for fast and direct access to the stored information. Unlike dynamic random-access memory (DRAM), SRAM does not require periodic refreshing to maintain data integrity.

When a read operation is initiated, the desired memory address is provided to the chip, and the corresponding data is retrieved from the flip-flops and made available on the output pins. Similarly, during a write operation, the data to be stored is applied to the input pins, and the address specifies the location where the data should be stored.

Detailed Application Field Plans

The IDT71V256SA20PZ8 is commonly used in various electronic systems that require fast and reliable data storage. Some of the application fields where this memory device finds utility include:

1. Embedded Systems: Used in microcontrollers, digital signal processors (DSPs), and other embedded systems to store program code and data.
2. Networking Equipment: Employed in routers, switches, and network interface cards (NICs) for buffering and caching purposes.
3. Telecommunications: Utilized in base stations, modems, and telecommunication infrastructure equipment for storing configuration data and temporary buffers.
4. Industrial Automation: Integrated into programmable logic controllers (PLCs) and industrial control systems for storing real-time data and program instructions.
5. Consumer Electronics: Found in gaming consoles, set-top boxes, and multimedia devices for data buffering and storage.

Alternative Models

• IDT71V256SA15PHG
• IDT71V256SA15YGI
• IDT71V256SA15YG8
• IDT71V