IDT71V256SA10PZ

Product Overview

Category

The IDT71V256SA10PZ belongs to the category of Static Random Access Memory (SRAM) chips.

Use

This product is primarily used as a high-speed, low-power memory solution in various electronic devices and systems.

Characteristics

• High-speed operation: The IDT71V256SA10PZ offers fast access times, allowing for efficient data retrieval.
• Low power consumption: This SRAM chip is designed to minimize power usage, making it suitable for battery-powered devices.
• Large storage capacity: With a capacity of 256 kilobits, this chip can store a significant amount of data.
• Reliable performance: The IDT71V256SA10PZ ensures stable and consistent operation, providing reliable data storage and retrieval.

Package

The IDT71V256SA10PZ is available in a compact and industry-standard 32-pin plastic package.

Essence

This SRAM chip serves as a crucial component in electronic systems, enabling rapid and reliable data storage and retrieval.

Packaging/Quantity

The IDT71V256SA10PZ is typically packaged in reels or trays, with each package containing a specified quantity of chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Organization: 32K x 8 bits
• Supply voltage: 3.3V
• Access time: 10 ns
• Operating temperature range: -40°C to +85°C
• Standby current: 10 μA (typical)
• Package dimensions: 14mm x 8.65mm x 2.4mm

Detailed Pin Configuration

The IDT71V256SA10PZ features a 32-pin configuration. Here is a detailed pinout description:

1. Chip Enable (CE)
2. Output Enable (OE)
3. Write Enable (WE)
4. Address Inputs (A0-A14)
5. Data Inputs/Outputs (DQ0-DQ7)
6. Power Supply (+3.3V)
7. Ground (GND)

Functional Features

• Chip Enable (CE): Activates the chip for read/write operations.
• Output Enable (OE): Enables the output buffers, allowing data to be read from the chip.
• Write Enable (WE): Enables write operations to the chip.
• Address Inputs (A0-A14): Selects the memory location for read/write operations.
• Data Inputs/Outputs (DQ0-DQ7): Transfers data between the chip and external devices.
• Power Supply (+3.3V): Provides the necessary power for the chip's operation.
• Ground (GND): Serves as the reference voltage for the chip.

Advantages and Disadvantages

Advantages

• High-speed operation enables efficient data access.
• Low power consumption prolongs battery life in portable devices.
• Large storage capacity accommodates a significant amount of data.
• Reliable performance ensures consistent data storage and retrieval.

Disadvantages

• Limited storage capacity compared to other memory technologies like NAND flash.
• Relatively higher cost per bit compared to alternative memory solutions.

Working Principles

The IDT71V256SA10PZ operates based on the principles of static random access memory. It stores data using flip-flops, which retain information as long as power is supplied. The chip utilizes address inputs to select specific memory locations and allows data to be read or written through control signals. The high-speed operation is achieved by utilizing advanced circuitry and optimized design techniques.

Detailed Application Field Plans

The IDT71V256SA10PZ finds applications in various electronic systems, including but not limited to: 1. Computer systems: Used as cache memory to enhance overall system performance. 2. Networking equipment: Enables fast data buffering and packet processing. 3. Telecommunications devices: Facilitates quick data storage and retrieval in communication systems. 4. Industrial control systems: Provides reliable and high-speed memory for process control applications. 5. Automotive electronics: Supports data storage requirements in automotive control units.

Detailed and Complete Alternative Models

1. Cypress CY62128BLL-70SXI: 128K x 8 SRAM, 70 ns access time.
2. Samsung K6R4016V1D-UI10: 64K x 16 SRAM, 10 ns access time.
3. Micron MT45W8MW16BGX-701 WT: 8M x 16 SRAM, 10 ns access time.
4. Renesas R1LV1616RSA-7SI#B0: 2M x 8 SRAM, 7 ns access time.
5. ISSI IS61C256AH-20N: 32K x 8 SRAM, 20 ns access time.

These alternative