IDT71V124SA15TYI

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: 44-pin Thin Small Outline Package (TSOP)
• Essence: Stores and retrieves digital information in electronic systems
• Packaging/Quantity: Available in reels of 250 units

Specifications

• Organization: 128K x 8 bits
• Voltage Supply: 3.3V
• Access Time: 15ns
• Operating Temperature Range: -40°C to +85°C
• Standby Current: 10μA (typical)
• Package Dimensions: 12.8mm x 20.4mm x 1.0mm

Detailed Pin Configuration

The IDT71V124SA15TYI has a total of 44 pins. The pin configuration is as follows:

1. A9
2. A8
3. A7
4. A6
5. A5
6. A4
7. A3
8. A2
9. A1
10. A0
11. VCC
12. I/O0
13. I/O1
14. I/O2
15. I/O3
16. I/O4
17. I/O5
18. I/O6
19. I/O7
20. GND
21. CE2#
22. CE1#
23. WE#
24. OE#
25. BYTE#
26. UB/LB#
27. A10
28. A11
29. A12
30. A13
31. A14
32. A15
33. A16
34. A17
35. A18
36. A19
37. A20
38. A21
39. A22
40. A23
41. VCCQ
42. VCCQ
43. GNDQ
44. GNDQ

Functional Features

• High-speed operation: The IDT71V124SA15TYI offers a fast access time of 15ns, making it suitable for applications requiring quick data retrieval.
• Low-power consumption: With a standby current of only 10μA, this memory device helps conserve energy in electronic systems.
• Synchronous operation: The SRAM operates synchronously with the system clock, ensuring reliable and accurate data transfer.
• Byte control functionality: The BYTE# pin allows for byte-wide or word-wide operations, providing flexibility in data handling.

Advantages and Disadvantages

Advantages: - High-speed performance enables efficient data processing. - Low-power consumption contributes to energy efficiency. - Synchronous operation ensures reliable data transfer. - Byte control functionality enhances flexibility in data handling.

Disadvantages: - Limited storage capacity (128K x 8 bits) compared to other memory devices. - Higher cost per bit compared to larger capacity memory chips.

Working Principles

The IDT71V124SA15TYI is based on static random-access memory (SRAM) technology. It stores digital information using flip-flops, which retain their state as long as power is supplied. The memory cells are organized in a matrix of rows and columns, allowing for efficient read and write operations. The synchronous nature of the SRAM ensures that data transfers occur precisely with the system clock, enabling reliable communication between the memory and the rest of the system.

Detailed Application Field Plans

The IDT71V124SA15TYI is commonly used in various electronic systems that require high-speed and low-power memory solutions. Some application fields include:

1. Embedded Systems: The SRAM is utilized in microcontrollers, digital signal processors (DSPs), and other embedded systems to store program code, data buffers, and intermediate results.
2. Networking Equipment: The memory device finds application in routers, switches, and network interface cards (NICs) for storing routing tables, packet buffers, and temporary data storage.
3. Telecommunications Systems: It is used in base stations, voice/data switches, and communication modules for buffering and storing voice and data packets.
4. Industrial Automation: The SRAM is employed in programmable logic controllers (PLCs), motor control systems, and robotic applications for fast data access and temporary storage.
5. Medical Devices: It is utilized in medical imaging equipment, patient monitoring systems, and diagnostic devices for storing and processing medical data.

Detailed and Complete Alternative Models

1. IDT71V124SA15PHI: Similar to the IDT71V124SA15TYI, but available in a 44-pin Plastic Leaded Chip Carrier (PLCC) package.
2. IDT71V124SA15Y: Same specifications as the IDT71V124SA15TYI, but available in a