FT24C08A-UDR-B

Product Overview

Category

FT24C08A-UDR-B belongs to the category of electrically erasable programmable read-only memory (EEPROM) chips.

Use

This chip is primarily used for non-volatile data storage in various electronic devices such as microcontrollers, computers, and consumer electronics.

Characteristics

• Electrically erasable: The FT24C08A-UDR-B can be erased and reprogrammed electrically, eliminating the need for UV light exposure.
• Non-volatile: The stored data remains intact even when power is removed.
• High storage capacity: This chip has a storage capacity of 8 kilobits (1 kilobyte).
• Low power consumption: It operates on low power, making it suitable for battery-powered devices.
• I2C interface: The FT24C08A-UDR-B communicates with the host device using the I2C protocol.

Package

The FT24C08A-UDR-B comes in a small outline integrated circuit (SOIC) package, which provides ease of integration into various electronic systems.

Essence

The essence of this chip lies in its ability to store and retrieve data reliably, offering a convenient solution for applications requiring non-volatile memory.

Packaging/Quantity

The FT24C08A-UDR-B is typically packaged in reels or tubes, containing a specific quantity of chips per package. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Memory capacity: 8 kilobits (1024 bytes)
• Supply voltage: 1.7V to 5.5V
• Operating temperature range: -40°C to +85°C
• Write endurance: 1 million cycles
• Data retention: 100 years

Detailed Pin Configuration

The FT24C08A-UDR-B has a total of 8 pins, which are assigned specific functions:

1. A0: Address input pin
2. A1: Address input pin
3. A2: Address input pin
4. GND: Ground connection
5. SDA: Serial data input/output pin
6. SCL: Serial clock input pin
7. WP: Write protect pin
8. VCC: Power supply

Functional Features

• Random access: The chip allows random access to any memory location, enabling efficient data retrieval.
• Byte-level programming: Data can be written or read at the byte level, providing flexibility in storing and accessing information.
• Hardware write protection: The WP pin can be used to protect the memory from accidental writes, ensuring data integrity.
• Acknowledge support: The FT24C08A-UDR-B provides acknowledge signals during data transfer, enhancing communication reliability.

Advantages and Disadvantages

Advantages

• High storage capacity for its size
• Low power consumption
• Electrically erasable and reprogrammable
• Compact package for easy integration
• Wide operating voltage range

Disadvantages

• Limited storage capacity compared to other memory technologies
• Relatively slower write speeds compared to some alternatives

Working Principles

The FT24C08A-UDR-B utilizes EEPROM technology, which employs floating-gate transistors to store and retrieve data. When writing data, an electric charge is applied to the floating gate, altering its electrical characteristics. This change is then detected when reading the stored information.

Detailed Application Field Plans

The FT24C08A-UDR-B finds applications in various fields, including but not limited to: - Embedded systems - Automotive electronics - Industrial control systems - Consumer electronics - Medical devices

Detailed and Complete Alternative Models

Some alternative models to the FT24C08A-UDR-B include: - AT24C08 - CAT24C08 - M24C08 - 24AA08

These alternatives offer similar functionality and can be used as replacements depending on specific requirements.

In conclusion, the FT24C08A-UDR-B is an electrically erasable programmable read-only memory chip that provides reliable non-volatile data storage. With its high storage capacity, low power consumption, and compact package, it is widely used in various electronic devices across different industries.