ER4-30J3PB

Product Overview

Category: Electronic Component
Use: Amplifier Circuit
Characteristics: High gain, low noise
Package: TO-92
Essence: NPN Bipolar Junction Transistor
Packaging/Quantity: Bulk packaging, 100 pieces per pack

Specifications

• Maximum Collector-Base Voltage: 40V
• Maximum Collector Current: 200mA
• DC Current Gain (hFE): 100 - 300
• Power Dissipation: 625mW
• Transition Frequency: 250MHz

Detailed Pin Configuration

1. Emitter (E)
2. Base (B)
3. Collector (C)

Functional Features

• High gain and low noise make it suitable for audio amplifier applications.
• Small package size allows for use in compact circuit designs.

Advantages

• High gain and low noise characteristics improve signal fidelity.
• Small package size enables versatile integration into various circuit layouts.

Disadvantages

• Limited maximum collector current may restrict use in high-power applications.
• Lower transition frequency compared to some alternative models.

Working Principles

The ER4-30J3PB operates as a NPN bipolar junction transistor, amplifying small signals in electronic circuits. When a small current flows from the base to the emitter, a larger current flows from the collector to the emitter, allowing for signal amplification.

Detailed Application Field Plans

The ER4-30J3PB is commonly used in audio amplifier circuits, sensor interfaces, and low-power switching applications due to its high gain and low noise characteristics. Its small package size also makes it suitable for portable electronics and space-constrained designs.

Detailed and Complete Alternative Models

1. BC547 - Similar NPN transistor with comparable specifications.
2. 2N3904 - Another NPN transistor with similar characteristics and package size.

This comprehensive entry provides an in-depth understanding of the ER4-30J3PB, covering its basic information, specifications, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.