DMTH10H025LK3-13

Introduction

The DMTH10H025LK3-13 is a semiconductor device belonging to the category of high-power MOSFETs. This entry provides an overview of its basic information, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.

Basic Information Overview

• Category: High-power MOSFET
• Use: Power switching applications in various electronic circuits
• Characteristics: High voltage and current handling capabilities, low on-state resistance, fast switching speed
• Package: TO-220AB
• Essence: Efficient power management and control
• Packaging/Quantity: Typically packaged individually

Specifications

The DMTH10H025LK3-13 has the following key specifications: - Drain-Source Voltage (VDS): 100V - Continuous Drain Current (ID): 100A - On-State Resistance (RDS(on)): 2.5mΩ - Gate-Source Voltage (VGS): ±20V - Total Gate Charge (Qg): 60nC - Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The DMTH10H025LK3-13 features a standard TO-220AB package with three pins: 1. Gate (G): Input for controlling the switching operation 2. Drain (D): Connection to the load or power supply 3. Source (S): Common reference point for the drain and gate terminals

Functional Features

• High Voltage and Current Handling: Enables use in high-power applications
• Low On-State Resistance: Minimizes power dissipation and improves efficiency
• Fast Switching Speed: Facilitates rapid switching between on and off states

Advantages and Disadvantages

Advantages: - Efficient Power Management: Enables effective control of power flow - High Reliability: Suitable for demanding industrial and automotive applications - Compact Package: TO-220AB package allows for easy integration into various circuit designs

Disadvantages: - Gate Drive Complexity: Requires careful attention to drive circuit design for optimal performance - Heat Dissipation: High power handling capability necessitates proper thermal management

Working Principles

The DMTH10H025LK3-13 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. When a sufficient gate-source voltage is applied, the MOSFET enters the conducting state, allowing current to flow through it.

Detailed Application Field Plans

The DMTH10H025LK3-13 finds extensive application in various fields, including: - Industrial Power Supplies: Utilized for efficient power conversion and regulation - Motor Control: Enabling precise control of electric motors in industrial and automotive systems - Renewable Energy Systems: Supporting power management in solar inverters and wind turbine converters - Automotive Electronics: Used in electric vehicle powertrains and battery management systems

Detailed and Complete Alternative Models

Several alternative models to the DMTH10H025LK3-13 include: - IRF1405PbF - FDP8870 - STP80NF55-06

In conclusion, the DMTH10H025LK3-13 high-power MOSFET offers efficient power management and control, making it suitable for diverse applications across industries. Its robust characteristics, coupled with careful consideration of its advantages and disadvantages, make it a valuable component in modern electronic systems.

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