S34ML02G200BHI500

Product Overview

Category

S34ML02G200BHI500 belongs to the category of NAND flash memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: S34ML02G200BHI500 has a storage capacity of 2 gigabits (256 megabytes).
• Fast data transfer rate: It offers high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: The product ensures data integrity and reliability through advanced error correction techniques.
• Low power consumption: S34ML02G200BHI500 is designed to minimize power consumption, making it suitable for battery-powered devices.
• Long lifespan: With its robust design and wear-leveling algorithms, this NAND flash memory provides a long lifespan.

Package

The S34ML02G200BHI500 is available in a small form factor package, commonly known as a Ball Grid Array (BGA) package. This package type allows for efficient integration into compact electronic devices.

Essence

The essence of S34ML02G200BHI500 lies in its ability to store and retrieve digital data reliably and efficiently.

Packaging/Quantity

This product is typically sold in reels or trays containing multiple units. The exact quantity may vary depending on the manufacturer's packaging specifications.

Specifications

• Storage Capacity: 2 gigabits (256 megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 10 years
• Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The S34ML02G200BHI500 has a standard pin configuration as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip enable
4. WE: Write enable
5. RE: Read enable
6. CLE: Command latch enable
7. A0-A18: Address inputs
8. DQ0-DQ15: Data input/output
9. R/B: Ready/busy status
10. WP: Write protect

Functional Features

• Page Program: Allows data to be written in page-sized increments.
• Block Erase: Enables erasing of entire blocks of data.
• Random Access: Provides direct access to any memory location for read or write operations.
• Error Correction Code (ECC): Implements advanced ECC algorithms to ensure data integrity.
• Wear-Leveling: Distributes write operations evenly across the memory cells, extending the lifespan of the NAND flash.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Low power consumption
• Reliable performance
• Long lifespan

Disadvantages

• Limited endurance compared to other non-volatile memory technologies
• Higher cost per unit compared to traditional hard disk drives

Working Principles

S34ML02G200BHI500 utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of information by varying the electrical charge on a floating gate. To read data, the controller applies voltages to specific memory cells and measures the resulting electrical current. Writing data involves applying precise voltage levels to program or erase individual memory cells.

Detailed Application Field Plans

The S34ML02G200BHI500 is widely used in various electronic devices that require reliable and high-capacity data storage. Some common application fields include:

1. Smartphones and tablets: Used for storing operating systems, applications, and user data.
2. Digital cameras: Provides storage for high-resolution photos and videos.
3. Solid-state drives (SSDs): Used as the primary storage medium in laptops and desktop computers.
4. Industrial automation: Enables data logging and firmware storage in industrial control systems.
5. Automotive electronics: Used for storing firmware, maps, and other critical data in automotive applications.

Detailed and Complete Alternative Models

1. S34ML04G200BHI500: A higher capacity variant with 4 gigabits (512 megabytes) of storage.
2. S34ML08G200BHI500: Offers even greater storage capacity with 8 gigabits (1 gigabyte).
3. S34ML16G200BHI500: Provides a substantial increase in storage capacity with 16 gigabits (2 gigabytes).

These alternative models offer increased storage capacities while maintaining similar characteristics and functionality to the S34ML02G200BHI500.

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