CY7C25652KV18-550BZC

Product Overview

Category

The CY7C25652KV18-550BZC belongs to the category of high-performance synchronous SRAM (Static Random Access Memory) chips.

Use

This product is primarily used in applications that require fast and reliable data storage and retrieval. It is commonly employed in various electronic devices such as computers, servers, networking equipment, and telecommunications systems.

Characteristics

• High Performance: The CY7C25652KV18-550BZC offers fast access times and high bandwidth, making it suitable for demanding applications.
• Large Capacity: With a capacity of 256 megabits (32 megabytes), this SRAM chip provides ample storage space for data-intensive tasks.
• Low Power Consumption: Despite its high performance, the CY7C25652KV18-550BZC is designed to operate efficiently with low power consumption.
• Wide Temperature Range: This chip can function reliably across a wide temperature range, making it suitable for both commercial and industrial applications.

Package and Quantity

The CY7C25652KV18-550BZC is available in a compact BGA (Ball Grid Array) package. Each package contains a single chip.

Specifications

• Organization: 32M x 8 bits
• Voltage Supply: 1.8V
• Access Time: 5.5 ns
• Operating Temperature Range: -40°C to +85°C
• Package Type: 165-ball BGA

Pin Configuration

The detailed pin configuration of the CY7C25652KV18-550BZC can be found in the datasheet provided by the manufacturer. It specifies the functions of each pin and their corresponding connections within the circuit.

Functional Features

• Asynchronous and Synchronous Operation: The CY7C25652KV18-550BZC supports both asynchronous and synchronous read and write operations, providing flexibility in various system designs.
• Burst Mode: This SRAM chip offers burst mode access, allowing for efficient data transfer between the memory and the processor.
• Automatic Power Down: It features an automatic power-down mode to conserve energy when the chip is not actively accessed.

Advantages

• High Performance: The CY7C25652KV18-550BZC delivers fast access times and high bandwidth, ensuring smooth operation of data-intensive applications.
• Reliability: With its wide temperature range and low power consumption, this SRAM chip offers reliable performance in diverse environments.
• Flexibility: The support for both asynchronous and synchronous operation allows for compatibility with different system architectures.

Disadvantages

• Cost: As a high-performance SRAM chip, the CY7C25652KV18-550BZC may have a higher price compared to lower-end memory options.
• Limited Capacity: While 256 megabits is substantial, certain applications may require even larger memory capacities.

Working Principles

The CY7C25652KV18-550BZC operates based on the principles of static random access memory. It stores data in a volatile manner using flip-flops, which retain information as long as power is supplied. The chip utilizes address lines to select specific memory locations and data lines for reading from or writing to those locations.

Application Field Plans

The CY7C25652KV18-550BZC finds application in various fields, including: 1. Computer Systems: Used as cache memory or main memory in high-performance computers. 2. Networking Equipment: Employed in routers, switches, and network interface cards to facilitate fast data processing. 3. Telecommunications Systems: Utilized in base stations, switches, and transmission equipment to handle large volumes of data.

Alternative Models

For users seeking alternative options, the following SRAM chips can be considered: 1. CY7C25652KV18-550BZXC: Similar to the CY7C25652KV18-550BZC, but with extended temperature range. 2. MT45W8MW16BGX-701IT: A comparable SRAM chip with a higher capacity of 512 megabits.

In conclusion, the CY7C25652KV18-550BZC is a high-performance synchronous SRAM chip that offers fast access times, large capacity, and low power consumption. Its flexibility, reliability, and wide application range make it an ideal choice for various electronic devices and systems.

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