CY7C1312BV18-167BZC

Product Overview

Category

The CY7C1312BV18-167BZC belongs to the category of high-performance synchronous SRAM (Static Random Access Memory) chips.

Use

This product is primarily used in applications that require fast and reliable data storage and retrieval. It is commonly employed in various electronic devices such as computers, servers, networking equipment, and telecommunications systems.

Characteristics

• High Performance: The CY7C1312BV18-167BZC offers fast access times and low latency, making it suitable for time-critical operations.
• Large Capacity: With a capacity of 1,048,576 bits (128K x 8), this chip provides ample storage space for data-intensive applications.
• Low Power Consumption: The device is designed to operate efficiently, minimizing power consumption and extending battery life in portable devices.
• Wide Temperature Range: It can function reliably across a wide temperature range, making it suitable for both commercial and industrial applications.

Package

The CY7C1312BV18-167BZC is available in a compact and industry-standard BGA (Ball Grid Array) package. This package ensures easy integration into circuit boards and provides excellent thermal performance.

Essence

The essence of the CY7C1312BV18-167BZC lies in its ability to provide high-speed and reliable data storage, enabling efficient operation of various electronic devices.

Packaging/Quantity

This product is typically sold in reels or trays, with each reel containing a specific quantity of CY7C1312BV18-167BZC chips. The exact packaging and quantity may vary depending on the supplier and customer requirements.

Specifications

• Organization: 128K x 8 bits
• Supply Voltage: 3.3V
• Access Time: 10 ns
• Operating Temperature Range: -40°C to +85°C
• Package Type: BGA
• Pin Count: 165

Detailed Pin Configuration

The CY7C1312BV18-167BZC has a total of 165 pins, each serving a specific function. The detailed pin configuration is as follows:

(Pin diagram goes here)

Functional Features

High-Speed Operation

The CY7C1312BV18-167BZC offers fast access times, allowing for quick data retrieval and storage. This feature is crucial in applications that require real-time processing and high-speed data transfer.

Low Power Consumption

Designed with power efficiency in mind, this chip minimizes power consumption without compromising performance. It is ideal for battery-powered devices or applications where energy efficiency is a priority.

Reliable Data Retention

The SRAM technology used in the CY7C1312BV18-167BZC ensures reliable data retention even in challenging environmental conditions. This reliability makes it suitable for critical applications where data integrity is paramount.

Advantages and Disadvantages

Advantages

• High-performance operation
• Large storage capacity
• Low power consumption
• Wide temperature range compatibility
• Compact package for easy integration

Disadvantages

• Relatively higher cost compared to other memory technologies
• Volatile memory, requiring constant power supply to retain data

Working Principles

The CY7C1312BV18-167BZC operates based on the principles of static random access memory (SRAM). It stores data using flip-flops, which retain information as long as power is supplied. When data needs to be accessed, the chip quickly retrieves the stored information and provides it to the requesting device.

Detailed Application Field Plans

The CY7C1312BV18-167BZC finds applications in various fields, including: 1. Computer Systems: Used in high-performance computers and servers for fast data storage and retrieval. 2. Networking Equipment: Employed in routers, switches, and network appliances to facilitate efficient data processing. 3. Telecommunications Systems: Used in telecom infrastructure equipment to handle real-time data transmission and reception. 4. Industrial Automation: Applied in control systems and programmable logic controllers (PLCs) for reliable data storage.

Detailed and Complete Alternative Models

1. CY7C1312BV18-167BZC-10BVXI: Similar to the CY7C1312BV18-167BZC, but with a 10 ns access time.
2. CY7C1312BV18-167BZC-15BVXI: Another variant with a 15 ns access time.
3. CY7C1312BV18-167BZC-20BVXI: A slower version with a 20 ns access time.

These alternative models offer different access times to cater to specific application requirements while maintaining similar characteristics and functionality.

In conclusion, the CY7C1312BV18-167BZC is a high-performance synchronous SRAM chip that