Ampleon USA Inc.
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BLF6G38-100,112
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BLF6G38-100,112

Product Overview

Category: RF Power Transistor
Use: Amplification of radio frequency signals
Characteristics: High power, high efficiency, broadband capability
Package: SOT539A
Essence: Gallium Nitride (GaN) technology
Packaging/Quantity: Tape and reel, 800 units per reel

Specifications

  • Frequency Range: 0.03 - 2.5 GHz
  • Output Power: 100 W
  • Efficiency: >60%
  • Gain: 16 dB
  • Voltage: 32 V
  • Current: 14 A
  • Thermal Resistance: 0.4 °C/W

Detailed Pin Configuration

  1. Gate
  2. Drain
  3. Source
  4. Ground

Functional Features

  • Broadband capability for multi-band applications
  • High power density
  • Excellent thermal stability
  • High efficiency over a wide frequency range

Advantages

  • High power output
  • Wide frequency range coverage
  • Compact package size
  • Suitable for multi-band applications

Disadvantages

  • Higher cost compared to traditional transistors
  • Requires careful handling due to sensitivity to electrostatic discharge

Working Principles

The BLF6G38-100,112 operates on the principle of amplifying radio frequency signals using GaN technology. When a signal is applied to the gate terminal, the transistor amplifies it and delivers a high-power output at the drain terminal.

Detailed Application Field Plans

  1. Telecommunications: Base station amplifiers, repeaters
  2. Radar systems: Pulse amplifiers, weather radar
  3. Industrial, scientific, and medical (ISM) applications: Plasma generators, RF heating

Detailed and Complete Alternative Models

  1. BLF888A - Similar power output, wider frequency range
  2. BLF578XR - Lower power output, lower cost
  3. BLF2425M7L - Higher power output, narrower frequency range

This comprehensive entry provides an in-depth understanding of the BLF6G38-100,112, covering its product details, specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.