AS6C2008-55SIN

Product Overview

Category

AS6C2008-55SIN belongs to the category of semiconductor memory devices.

Use

It is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Low power consumption
• Large storage capacity
• Compact package size
• Reliable performance

Package

AS6C2008-55SIN is available in a small outline integrated circuit (SOIC) package.

Essence

The essence of AS6C2008-55SIN lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

AS6C2008-55SIN is typically packaged in reels or trays, with each reel or tray containing a specific quantity of devices. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 2 Megabit x 8-bit
• Operating Voltage: 3.0V - 3.6V
• Access Time: 55 ns
• Standby Current: 10 μA (typical)
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

AS6C2008-55SIN has a total of 28 pins, which are assigned specific functions as follows:

1. Chip Enable (CE)
2. Output Enable (OE)
3. Write Enable (WE)
4. Address Inputs (A0-A18)
5. Data Inputs/Outputs (DQ0-DQ7)
6. Power Supply (Vcc)
7. Ground (GND)

Please refer to the datasheet for the complete pin configuration diagram.

Functional Features

• Random access to any memory location
• Non-volatile storage of data
• High-speed read and write operations
• Low power consumption in standby mode
• Easy integration into various electronic systems

Advantages and Disadvantages

Advantages

• Fast access time allows for quick data retrieval
• Low power consumption helps conserve energy
• Large storage capacity accommodates a wide range of applications
• Compact package size enables space-efficient designs
• Reliable performance ensures data integrity

Disadvantages

• Volatile memory requires continuous power supply to retain data
• Relatively higher cost compared to other memory technologies
• Limited endurance for write cycles

Working Principles

AS6C2008-55SIN utilizes static random access memory technology, which stores each bit of data in a flip-flop circuit. This allows for fast access times and eliminates the need for periodic data refreshing. The memory cells are organized in a matrix, with each cell being accessed by its unique address. When a read or write operation is initiated, the appropriate control signals are activated to enable the desired operation.

Detailed Application Field Plans

AS6C2008-55SIN finds application in various electronic devices and systems, including but not limited to: - Personal computers - Laptops and notebooks - Servers and data centers - Mobile phones and tablets - Automotive electronics - Industrial automation systems - Medical equipment - Consumer electronics

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to AS6C2008-55SIN include: - AS6C4008-55SIN: 4 Megabit x 8-bit SRAM - AS6C8008-55SIN: 8 Megabit x 8-bit SRAM - AS6C16008-55SIN: 16 Megabit x 8-bit SRAM

These alternative models provide varying storage capacities to suit different application requirements.

In conclusion, AS6C2008-55SIN is a high-speed, low-power static random access memory device that offers reliable performance and large storage capacity. It finds application in a wide range of electronic devices and systems, providing fast and efficient data storage and retrieval capabilities.