S-1011N30-M6T1U4

Basic Information Overview

Category: Electronic Component
Use: Signal Amplification
Characteristics: High Gain, Low Noise
Package: SMD (Surface Mount Device)
Essence: Transistor
Packaging/Quantity: Tape and Reel, 3000 units per reel

Specifications

• Model Number: S-1011N30-M6T1U4
• Type: NPN Bipolar Junction Transistor
• Maximum Collector Current (Ic): 500mA
• Maximum Collector-Emitter Voltage (Vceo): 30V
• Maximum Power Dissipation (Pd): 350mW
• Transition Frequency (ft): 100MHz
• Noise Figure (NF): 2dB
• Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The S-1011N30-M6T1U4 transistor has a three-pin configuration:

1. Emitter (E): The Emitter pin is connected to the ground or reference potential.
2. Base (B): The Base pin controls the flow of current between the Collector and Emitter.
3. Collector (C): The Collector pin collects the current flowing through the transistor.

Functional Features

• High gain amplification of weak signals.
• Low noise performance for improved signal quality.
• Suitable for small-signal amplification applications.
• Compact SMD package for space-constrained designs.
• Wide operating temperature range for versatile usage.

Advantages and Disadvantages

Advantages: - High gain amplification improves signal strength. - Low noise figure enhances signal quality. - Small form factor allows for compact circuit designs. - Wide operating temperature range ensures reliability in various environments.

Disadvantages: - Limited maximum collector current may restrict high-power applications. - Lower transition frequency compared to some alternative models. - Requires careful handling during assembly due to its small size.

Working Principles

The S-1011N30-M6T1U4 is an NPN bipolar junction transistor. It operates based on the principles of amplification and control of electrical current. When a small input signal is applied to the Base pin, it controls the flow of current between the Collector and Emitter pins. This amplifies the input signal, allowing for increased signal strength and improved performance in electronic circuits.

Detailed Application Field Plans

The S-1011N30-M6T1U4 transistor finds application in various fields, including:

1. Audio Amplifiers: Used to amplify audio signals in devices such as speakers, headphones, and audio systems.
2. Radio Frequency (RF) Circuits: Employed in RF amplification stages to enhance weak signals in communication systems.
3. Sensor Interfaces: Utilized to amplify signals from sensors like temperature sensors, pressure sensors, etc.
4. Signal Processing Circuits: Integrated into circuits that require amplification of low-level signals for further processing.

Detailed and Complete Alternative Models

1. S-1011N30-M6T1U5

   • Similar specifications to S-1011N30-M6T1U4 with higher transition frequency (ft).
   • Suitable for applications requiring higher frequency response.

2. S-1011N30-M6T1U3

   • Similar specifications to S-1011N30-M6T1U4 with lower noise figure (NF).
   • Ideal for applications demanding improved signal quality.

3. S-1011N30-M6T1U6

   • Similar specifications to S-1011N30-M6T1U4 with higher maximum collector current (Ic).
   • Suitable for applications requiring higher power handling capability.

4. S-1011N30-M6T1U2

   • Similar specifications to S-1011N30-M6T1U4 with lower maximum collector-emitter voltage (Vceo).
   • Ideal for applications operating at lower voltage levels.

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