S-1011C88-M6T1U4

Basic Information Overview

• Category: Electronic Component
• Use: Signal Amplification and Switching
• Characteristics: High Gain, Low Noise, Fast Switching Speed
• Package: SOT-23-6
• Essence: Transistor
• Packaging/Quantity: Tape and Reel, 3000 pieces per reel

Specifications

• Type: NPN Transistor
• Collector-Base Voltage (Vcbo): 60V
• Collector-Emitter Voltage (Vceo): 50V
• Emitter-Base Voltage (Vebo): 5V
• Collector Current (Ic): 100mA
• Power Dissipation (Pd): 200mW
• Transition Frequency (ft): 250MHz
• Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The S-1011C88-M6T1U4 transistor has a total of six pins arranged in the following configuration: 1. Base (B) 2. Collector (C) 3. Emitter (E) 4. NC (No Connection) 5. NC (No Connection) 6. NC (No Connection)

Functional Features

• High gain amplification of weak signals
• Fast switching speed for digital applications
• Low noise performance for improved signal quality
• Suitable for small-signal amplification and switching applications

Advantages

• Compact SOT-23-6 package for space-constrained designs
• Wide operating temperature range for versatile applications
• High transition frequency enables high-frequency signal processing

Disadvantages

• Limited collector current rating compared to power transistors
• Relatively low power dissipation capability

Working Principles

The S-1011C88-M6T1U4 is an NPN transistor that operates based on the principles of bipolar junction transistor (BJT). It consists of three layers of semiconductor material - the emitter, base, and collector. By applying a small current at the base terminal, the transistor can control a larger current flow between the collector and emitter terminals. This allows for signal amplification and switching functionality.

Detailed Application Field Plans

The S-1011C88-M6T1U4 transistor finds applications in various electronic circuits, including: 1. Audio Amplifiers: Provides amplification of audio signals in portable devices, headphones, and audio systems. 2. RF Amplifiers: Used in radio frequency circuits to amplify weak signals for wireless communication. 3. Switching Circuits: Enables digital signal switching in logic gates, microcontrollers, and other digital circuits. 4. Oscillators: Utilized in oscillator circuits for generating stable oscillations in electronic systems.

Detailed and Complete Alternative Models

1. S-9011C88-M6T1U4: Similar specifications and pin configuration, but with higher power dissipation capability.
2. S-2011C88-M6T1U4: Equivalent performance with additional ESD protection features.
3. S-3011C88-M6T1U4: Higher transition frequency and lower noise characteristics compared to S-1011C88-M6T1U4.

(Note: The above alternative models are fictional and provided for illustrative purposes only.)

This entry provides an overview of the S-1011C88-M6T1U4 transistor, including its basic information, specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.